Distribution and propagation of dislocation defects in quasi-single crystalline silicon ingots cast by the directional solidification method

Zhang, Yunfeng; Li, Zaoyang; Meng, Qingchao; Zhiyan, Hu; Liu, Lijun

doi:10.1016/j.solmat.2014.08.022

Cited by 20 publications

(7 citation statements)

References 11 publications

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“…4a and c, respectively). They are therefore of a/2 [1][2][3][4][5][6][7][8][9][10] type, which indicates that they are perfect edge dislocations. These dislocations are very evenly separated, about 90 nm apart.…”

Section: Tem and In-situ Tem High Temperature Strainingmentioning

confidence: 99%

“…Here, we have clearly established that the densest SGB dislocations are separated by 90 nm and that this distance can be also resolved by etch pits observation inside the SEM. The shape of d2 dislocations lines that follow the growth direction [001] and the trace of the {-1-11} glide plane suggests that these dislocations are either the result of an elastic interaction between gliding a/2[101] dislocations and those from the SGB, or an attractive reaction between gliding a/2[0-1-1] dislocations and the a/2 [1][2][3][4][5][6][7][8][9][10] dislocations of the d1 family according to the scheme:…”

Section: Grain Boundary Structure and Misorientationsmentioning

confidence: 99%

“…The potential dissociation of these dislocations was not investigated here as HRTEM would be necessary under various angles. However, dislocations d2 have a line that pertain to the SGB plane, {1-10} in our case, and d1 pertains to b d1 x [001] = [1][2][3][4][5][6][7][8][9][10] x [001] = [-1-10], which make them very similar to the Lomer perfect dislocations observed by Bauer et al in multicrystalline solar cells [22]. However, these types of dislocation can also be Lomer-Cotrell locks generated by two intersecting glide planes, in our case {-1-11} and {111} planes.…”

Section: Grain Boundary Structure and Misorientationsmentioning

confidence: 99%

“…Anyway, many macrodefects having an impact on solar cell efficiency have been found in such ingots. Parasitic mc-Si (or large twinned) grains and large subgrains domains originating from inappropriate seed junctions may for instance appear and multiply essentially on the edges of the ingots and degrade locally the PV efficiency of Si (see for example [4], [5]). When [001] growth initiates far from any inappropriate seed junction or multicrystalline silicon (mc-Si) sources [2], the main residual defects are usually dislocations.…”

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Subgrains, micro-twins and dislocations characterization in monolike Si using TEM and in-situ TEM

Lantreibecq

Monchoux

Pihan

et al. 2018

Materials Today: Proceedings

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A critical aspect in the development of mono-like Silicon for photovoltaic (PV) application lies in the control of its defect microstructure. While micro-twins do not seem to represent a major concern regarding electrical activity, some dislocations and low angle grain boundaries need to be avoided in the growing process because of their recombination properties. Here, we have studied how these defects grow and interact together in order to understand what are the mechanisms responsible for their presence in the cast ingots. We show that, in our specific convex liquid-solid interface growth mode, micro-twins probably originate from this interface while dislocations and subgrains build up both by epitaxy at the solid liquid interface and through dislocation-boundary interactions in the solidified region. Post-growth TEM characterization allowed identifying constitutive dislocations of some subgrain boundaries for the case of [001] seeds. In-situ TEM straining of Si at high temperature also allowed measuring dislocation mobility at several temperatures. Those are compared to the dislocation velocities in pure Czochralski Si found in literature.

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Section: Tem and In-situ Tem High Temperature Strainingmentioning

confidence: 99%

Section: Grain Boundary Structure and Misorientationsmentioning

confidence: 99%

Section: Grain Boundary Structure and Misorientationsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Subgrains, micro-twins and dislocations characterization in monolike Si using TEM and in-situ TEM

Lantreibecq

Monchoux

Pihan

et al. 2018

Materials Today: Proceedings

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“…SA‐GBs are of particular interest for the quasi‐mono crystalline silicon solidification method: multiple seeds are necessary for the growth of large crystals and the seed junctions and the resulting SA‐GBs are regions of thermal and mechanical stress concentration, where plastic deformation is more likely to occur . These regions have been identified as the primary source of dislocations in seed‐assisted crystal growth of silicon .…”

Section: Introductionmentioning

confidence: 99%

The impact of oxygen precipitation on dislocation generation at small angle grain boundaries during seed‐assisted directional solidification of silicon

Autruffe

Kivambe

Arnberg

et al. 2015

Physica Status Solidi (a)

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We have investigated the source of dislocations generated during growth and subsequent cooling of quasi‐monocrystalline silicon. Bi‐crystals of silicon separated by ∼5.2° tilt small angle grain boundary have been directionally solidified at two different pulling rates, i.e., 3 and 13 μm s−1. We observe higher density of grain boundary‐associated dislocations at the ingot pulled at a lower rate. This observation is explained by the impact of oxygen precipitation behavior at the grain boundary.

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Seed‐Assisted Growth of Cast‐Mono Silicon for Photovoltaic Application: Challenges and Strategies

et al. 2020

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Silicon has dominated the photovoltaic material market for a few decades. In contrast to perfectly crystallized Czochralski (CZ) silicon, casting multi‐crystalline silicon attracts much more attention due to its low cost and high throughput, which meets the increasing demands of the rapidly developing photovoltaic industry. However, the unavoidable appearance of crystallographic defects seriously limits the performance improvement of solar cells. In this Review, a general overview of the recent efforts in high‐quality casting silicon crystal techniques is provided, including the dendritic cast method, high‐performance multi‐crystalline silicon, and cast‐mono silicon. Then, special attention is focused on the seed‐assisted growth of cast‐mono silicon, which shares some of the most favorable features of high solar cell efficiency offered by well‐established CZ silicon and cost‐effectiveness of cast multi‐crystalline silicon. Nevertheless, this innovative growth technique facing a few challenges once impeded its mass scale production. The main issues concerning nucleation and growth control, extended defects as well as impurity contamination are addressed, which pave the way for this high‐potential technology in applications for high‐efficiency and low‐cost solar cells.

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Distribution and propagation of dislocation defects in quasi-single crystalline silicon ingots cast by the directional solidification method

Cited by 20 publications

References 11 publications

Subgrains, micro-twins and dislocations characterization in monolike Si using TEM and in-situ TEM

Subgrains, micro-twins and dislocations characterization in monolike Si using TEM and in-situ TEM

The impact of oxygen precipitation on dislocation generation at small angle grain boundaries during seed‐assisted directional solidification of silicon

Seed‐Assisted Growth of Cast‐Mono Silicon for Photovoltaic Application: Challenges and Strategies

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