Distribution coefficient of boron in Si crystal ingots grown in cusp-magnetic Czochralski process

The distribution of dopants and impurities in silicon grown with the floating zone method determines the electrical resistivity and other important properties of the crystals. A crucial process that defines the transport of these species is the segregation at the crystallization interface. To investigate the influence of the melt flow on the effective segregation coefficient as well as on the global species transport and the resulting distribution in the grown crystal, we developed a new coupled numerical model. Our simulation results include the shape of phase boundaries, melt flow velocity and temperature, species distribution in the melt and, finally, the radial and axial distributions in the grown crystal. We concluded that the effective segregation coefficient is not constant during the growth process but rather increases for larger melt diameters due to less intensive melt mixing.

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Distribution coefficient of boron in Si crystal ingots grown in cusp-magnetic Czochralski process

Cited by 3 publications

References 20 publications

Effect of asymmetric magnetic fields on crystal–melt interface in silicon CZ process

Effect of asymmetric magnetic fields on crystal–melt interface in silicon CZ process

Microstructure Selection Involving Nucleation in Directionally Solidified Nd-Fe-B Peritectic Alloys

Numerical Simulation of Species Segregation and 2D Distribution in the Floating Zone Silicon Crystals

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