Distribution of 1.68 eV emission from diamond films

Abstract

Free-standing polycrystalline chemical vapor deposition diamond films grown on a silicon wafer, with electrical behavior similar to values currently mentioned in the literature, present microheterogeneity. A detailed analysis by micro Raman shows how the diamond and nondiamond phases are distributed within the film and also the distribution of the silicon related luminescence. This luminescence is discussed in terms of two emitting centers close in energy. Absolute intensity of the diamond peak is not correlated with the good quality of the film as assessed by the Raman linewidth and ratio of this line to the nondiamond Raman lines.

Synthesis of strong SiV photoluminescent diamond particles on silica optical fiber by chemical vapor deposition

“…The samples 1.6T5 and 1.6T15 display a strong diamond peak at about 1330 cm -1 , which is slightly blue shifted about 2 cm -1 compared with the ideal diamond peak in Raman spectrum. The fitted diamond contents calculated by using the equation in reference [9,23] are 74% and 76% for samples 1.6T5 and 1.6T15, respectively. The peaks at about 1140 and 1470 cm -1 are due to the reflection of the trans-polyacetylene (TPA) [24][25][26][27] , which is related to hydrogen in amorphous carbon grain boundaries (GBs) of the diamond particles.…”

X-ray Excited Optical Luminescence from Diamond Thin Films: The Contribution of sp2- and H-Bonded Carbon to the Luminescence

“…The photoluminescence (PL) excited by UV or visible light and cathodoluminescence (CL) excited by the electron beam from diamond thin films prepared by chemical vapor deposition (CVD) techniques have been widely studied. A sharp band at 1.68 eV − and several broad-band emissions at higher energies − from CVD diamond films have been reported. It is widely accepted that the sharp emission at 1.68 eV is related to defect centers involving silicon impurity in diamond. − However, the origin of the broad-band emissions is still not well understood.…”

“…A sharp band at 1.68 eV − and several broad-band emissions at higher energies − from CVD diamond films have been reported. It is widely accepted that the sharp emission at 1.68 eV is related to defect centers involving silicon impurity in diamond. − However, the origin of the broad-band emissions is still not well understood. These broad-band emissions have been attributed to the phase impurities of short-range sp 2 -bonded carbon 6-8,13-15 and hydrogen 9-14 on the surfaces of CVD diamond films.…”