Distribution of Applied Electric Field on Intact Si(100) Surface and Defective Si(100) Surface

Abstract

In this paper, we investigate the effects of electric field intensity on both the pristine and defective surfaces of Si(100) through application of an electric field. The amount of charge on the surface of Si and the atomic arrangement on the surface are measured. During the application of an electric field, there iS a change in the atomic arrangement and a tranSfer of charge. It may influence the LewiS acid'S Size and the involved atomS' base, thereby creating a conceptual and experimental foundation for further studies on Surface adsorption. At the same time, Studying the poSSible structure and charge diStribution of the silicon Surface can alSo increase our understanding of the Si Surface from the electrical level.