Distribution of impurities in base-depleted region of diode temperature sensor

Abstract

The performance of diode temperature sensors depends on their base-depleted region thickness and impurity distribution profile. In this article, we study the boron diffusion process in the thin base region with a thickness of about 1 μm. We show that, for the proposed p+–n–p temperature sensor structure, the impurity distribution in the n region has the form of an asymmetric parabola, with an extreme concentration point shifted towards the “upper” p+ region.