High-efficiency polymer light-emitting diodes based on poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylene vinylene] with plasma-polymerized CHF 3 -modified indium tin oxide as an anode Delayed electroluminescence via triplet-triplet annihilation in light emitting diodes based on poly [2-methoxy -5-(2 ′ -ethyl-hexyloxy)-1,4-phenylene vinylene] Appl.We report the observation of a spectroscopically resolved delayed electrofluorescence ͑DEF͒ in the time domain of nanosecond to microsecond ͑depending on temperature, in the range of 30-290 K, as well as bias͒ from light-emitting diodes based on poly͓2-methoxy-5-͑2Ј-ethyl-hexyloxy͒-1,4-phenylene vinylene͔. The decay kinetics of this DEF are always found to be biexponential in nature. The fast decaying component with a lifetime of ϳ40 ns is attributed to the back transfer of nonemissive ͑or very weakly emissive͒ interchain excited singlets ͑partially charge-transfer states͒ to emissive intrachain excited singlets ͑this component is called DEF CT ͒. The relatively slower decaying component with a lifetime of ϳ0.2-6.2 s ͑depending on temperature as well as bias͒ is attributed to the recombination of detrapped space-charge carriers at the polymer-electrode interfaces ͑this component is called DEF SC ͒. The intensity of DEF SC increases as the temperature is increased from 30 to 290 K, although it is weak at low temperature ͑Ͻ100 K͒. The temperature dependence of the recombination rate of the detrapped space-charge carriers yields two activation energies of 2.2 and 40 meV below and above ϳ130 K, respectively. The existence of these two activation energies is explained on the assumption of electrons being in shallow traps and holes in deep traps. Also, our data indicate that the space-charge carriers generally act as major quenching sites ͑especially at 290 K͒ for triplet excitons in polymer light-emitting diodes.