Diversity of Properties of Device Structures Based on Group-III Nitrides, Related to Modification of the Fractal-Percolation System

Influence of low temperature on the electrophysical and noise characteristics of UV LEDs based on InGaN/GaN quantum well structures

“…An insignificant increase of current noise density (S I ∝ I) at the frequencies of 20 and 70 Hz on the initial area (I ≤ 10 µA) of the current dependence (Fig. 3) does not allow for making a conclusion on presence of a fractalpercolation system in the samples [6]. A significant increase of noise at I > 0.5 mA for both temperatures (S I ∝ I 2.5 ) can be explained by rearrangement or formation of new defects [16,17], flowing high-density current due to a nonuniform distribution of the carrier stream along the LED structure cross-section [6,16].…”

“…3) does not allow for making a conclusion on presence of a fractalpercolation system in the samples [6]. A significant increase of noise at I > 0.5 mA for both temperatures (S I ∝ I 2.5 ) can be explained by rearrangement or formation of new defects [16,17], flowing high-density current due to a nonuniform distribution of the carrier stream along the LED structure cross-section [6,16]. Such changes in the defect spectrum can be due to energy emitted under nonradiative recombination, i.e.…”

“…A drop of luminescence intensity and external quantum efficiency with temperature rise was described in several papers in the ranges: from 280 to 340 [1], from 300 to 500 [2], from 290 to 360 K [3]. In this respect, research of radiating [4,5] and noise characteristics [6] of lightemitting diodes at low temperatures is promising since they can be used at negative ambient temperatures (in freezing chambers). Temperature decrease increases the luminous flux, reduces the LED degradation rate, reduces the semiconductor diode noise density.…”

Impedance Spectroscopy of Hierarchical Porous Nanomaterials Based on por-Si, por-Si Incorporated by Ni and Metal Oxides for Gas Sensors

“…The observed effects can be explained by the formation of a percolation merged cluster under conditions slightly exceeding the percolation threshold. The technical devices implemented at the percolation threshold are certainly of great interest [48][49][50][51]. In such structures, when interacting with oxygen, the percolation cluster breaks off.…”

Peculiarities of admittance spectroscopy study of wide bandgap semiconductors on the example of diamond

“…Presently, the trend in electronic devices for power and high frequency application is to shift to wide bandgap semiconductor materials [1][2][3][4]. This shift is caused by the performance threshold achieved by classical semiconductors such as Si, Ge and GaAs.…”