DLTS and capacitance transients study of defects induced by neutron irradiation in MOS structures CCD process

Ahaitouf, Ali; Losson, Etienne; Charles, J.‐P.

doi:10.1109/radecs.1999.858636

Cited by 1 publication

(1 citation statement)

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“…The negative V th shift is proportional to the net charge accumulation caused by radiation in the oxide layer, which is the main reason for the negative V th shift in the MOSFET. When exposed to neutron irradiation, different types of defects are produced in the oxide layer, increasing the defect density in the device [23,24]. These radiation-induced defects may capture the holes induced by gammaray irradiation and further increase the number of trap charges in the oxide layer.…”

Section: Discussionmentioning

confidence: 99%

Research on the Synergistic Effect of Total Ionization and Displacement Dose in GaN HEMT Using Neutron and Gamma-Ray Irradiation

et al. 2022

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This paper studies the synergistic effect of total ionizing dose (TID) and displacement damage dose (DDD) in enhancement-mode GaN high electron mobility transistor (HEMT) based on the p-GaN gate and cascode structure using neutron and 60Co gamma-ray irradiation. The results show that when the accumulated gamma-ray doses are up to 800k rad(Si), the leakage-current degradations of the two types of GaN HEMTs with 14 MeV neutron irradiation of 1.3 × 1012 n/cm2 and 3 × 1012 n/cm2 exhibit a lower degradation than the sum of the two separated effects. However, the threshold voltage shifts of the cascode structure GaN HEMT show a higher degradation when exposed to both TID and DDD effects. Moreover, the failure mechanisms of the synergistic effect in GaN HEMT are investigated using the scanning electron microscopy technique. It is shown that for the p-GaNHEMT, the increase in channel resistance and the degradation of two-dimensional electron gas mobility caused by neutron irradiation suppresses the increase in the TID leakage current. For the cascode structure HEMT, the neutron radiation-generated defects in the oxide layer of the metal–oxide–semiconductor field-effect transistor might capture holes induced by gamma-ray irradiation, resulting in a further increase in the number of trapped charges in the oxide layer.

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Section: Discussionmentioning

confidence: 99%