2007
DOI: 10.4028/www.scientific.net/ssp.131-133.485
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DLTS and PR Studies of Partially Relaxed InGaAs/GaAs Heterostructures Grown by MOVPE

Abstract: The studies of electrical activity of deep electron traps and the optical response of partially-strain relaxed InxGa1-xAs layers (x=5.5%, 7.7% and 8.6%) grown by metalorganic vapourphase epitaxy (MOVPE) have been performed by means of deep-level transient spectroscopy (DLTS) and photoreflectance (PR). DLTS measurements revealed two electron traps. One of the trap has been attributed to electron states at α-type misfit dislocations. The other trap has been ascribed to the EL2 point defect. The PR spectra at roo… Show more

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