IntroductionDNA chips are playing important roles in molecular biology, pharmaceutical research, and clinical applications. While most DNA chips use fluorescence detection, 1 many types of solidstate biosensors have been developed by combining biotechnology and semiconductor technology. [2][3][4][5][6][7][8][9][10][11][12][13][14] In particular, field-effect-transistor (FET) sensors have been used to electrochemically detect DNA hybridization events on solid surfaces. 3,[8][9][10][11][12][13][14] Since a DNA molecule contains phosphate ions, which are negatively charged in an aqueous solution, the number of negative charges on the gate surface of the FET sensor increases as the result of hybridization and extension reactions.The charge-density change can be directly transduced into an electrical signal by the field effect. The FET sensor can thus detect DNA without labeling. Based on this principle, not only DNA hybridization detection, but also single-nucleotide polymorphism analysis, 8,12 has been carried out by using the FET sensor. Moreover, the charge-density change on a silicon-nitride (SiN) gate surface caused by singlebase extension could be measured as a shift in the gate voltage. 14 This result indicates that it is possible to realize labelfree DNA sequencing based on the intrinsic charges of DNA molecules. The DNA hybridization efficiency is affected by the immobilization procedure for the DNA probes on the sensing surface of the FET sensor. Generally, FET sensors with a SiN gate insulator are used for DNA detection. 9,11,12,14 In this case, a silane-coupling method, which has many complicated steps, was applied to immobilize the DNA probes on the SiN surface; this method makes it difficult to control the DNA probe density. 9,11 In addition, the FET sensor with a SiN gate insulator must be operated in a dark environment, such as a lightshielding box, because of its light sensitivity. To solve the above-mentioned problem, we designed an extended-gate FET sensor with a gold-sensing electrode, 13 to which a gold-thiol bond could be applied. The use of the gold electrode enabled us to immobilize DNA probes on the gold surface by simply spotting a DNA-probe solution. Since the gold electrode is located in a different area from the FET, it can be operated without a light-shielding box by masking only the FET. However, when the FET sensor with the gold electrode is used in an aqueous solution, fluctuation of the interface potential on the gold surface occurs, resulting in decreased sensitivity. To improve the sensitivity by reducing the fluctuation, we propose a measurement technique using a highfrequency voltage superimposed onto a reference electrode of the FET sensor. The fundamental characteristics of the FET sensor with the superimposed high-frequency voltage were measured as a change in the drain current of the FET sensor after dipping it into the aqueous solution. With a superimposed high-frequency voltage of over 1 kHz, the time required to stabilize the drain current of the FET sensor was not only s...