Do hot electrons cause excess noise?

Jungemann, C.; Meinerzhagen, B.

doi:10.1016/j.sse.2006.03.020

Cited by 11 publications

(2 citation statements)

References 29 publications

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“…The noise contribution from the velocity saturation region and thus carrier heating are negligible. On the other hand, recent theoretical studies using the hydrodynamic (HD) and full Langevin Boltzmann equation (LBE) noise models [3,4], revealed that the channel noise stems mainly from the source side of the channel due to the impedance field near the source junction as well as larger local noise source caused by the higher carrier concentration near the source. Since the direct experimental verifications are lacking, the question remains how reliable the conclusions drawn from the HD and LBE models with respect to the spatial origin of noise.…”

Section: Introductionmentioning

confidence: 99%

Experimental Study on the Role of Hot Carrier Induced Damage on High frequency Noise in Deep Submicron NMOSFETs

Hong

et al. 2007

2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium

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Impact of hot carrier induced interface damage and its spatial location on RF noise in deep submicrometer NMOSFETs is studied. A significant increase in minimum noise figure NF min and noise resistance R n after hot carrier stress, which cannot be explained alone by the change of the carrier density in the inversion layer, was observed. It was demonstrated that the presence of interface states at source side shows much greater impact on the degradation of NF min and R n . This provides strong experimental evidence that the local noise at source side plays a more important role in determining the channel noise.Index Terms -MOSFETs, semiconductor device noise, hot carrier, channel noise.

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Section: Introductionmentioning

confidence: 99%

Experimental Study on the Role of Hot Carrier Induced Damage on High frequency Noise in Deep Submicron NMOSFETs

Hong

et al. 2007

2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium

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“…As we discussed in Chapter 2, Knoblinger and Klein believe that excess noise are mainly due to the increase in lateral electrical field[21][22]; however, Chen and Deen, based on channel length modulation (CLM), showed that the noise contribution from the velocity saturation region is negligible[27]. Furthermore, recent theoretical studies using the hydrodynamic (HD) and full Langevin-Boltzmann equation (LBE) noise models, demonstrated that the channel noise is dominated by the source-side contribution due to higher impedance field near the source junction[29,51]. Hence, whether the channel noise is dominant by the source or drain side is still controversial.On the other hand, as device aggressively scales down, hot carrier (HC) induced degradation emerges as one of the most serious reliability issues in MOSFETs[52][53][54][55][56].…”

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confidence: 99%