2011
DOI: 10.1126/science.1206980
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Domain Dynamics During Ferroelectric Switching

Abstract: The utility of ferroelectric materials stems from the ability to nucleate and move polarized domains using an electric field. To understand the mechanisms of polarization switching, structural characterization at the nanoscale is required. We used aberration-corrected transmission electron microscopy to follow the kinetics and dynamics of ferroelectric switching at millisecond temporal and subangstrom spatial resolution in an epitaxial bilayer of an antiferromagnetic ferroelectric (BiFeO(3)) on a ferromagnetic… Show more

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Cited by 343 publications
(271 citation statements)
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“…Details about solving equations (7)(8)(9) for the film/substrate system and the required boundary conditions are presented in depth elsewhere 23,39 . Domain wall energy in the system was included through the polarization gradient energy.…”
Section: Methodsmentioning
confidence: 99%
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“…Details about solving equations (7)(8)(9) for the film/substrate system and the required boundary conditions are presented in depth elsewhere 23,39 . Domain wall energy in the system was included through the polarization gradient energy.…”
Section: Methodsmentioning
confidence: 99%
“…In comparison with general measurement techniques, in situ TEM can be used to directly observe atomicscale domain interactions in real time during switching through the thickness of the film, enabling switching dynamics to be correlated with local defect microstructures in real time 13,18,19 . Employing spherical aberration-corrected TEM with sub-angstrom resolution 20,21 , we are able to directly map the local polarization at the atomic scale [9][10] . We combine this with mesoscale phase-field modelling of the dynamic polarization-switching processes to corroborate our observations with current models of ferroelectric thin films.…”
mentioning
confidence: 99%
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“…The growth parameters were the same as for the samples reported in Ref. 38. Near-normal incidence IR reflectivity spectra of the BiFeO 3 ceramics and film were obtained using a Fourier-transform IR spectrometer Bruker IFS 113v in the frequency range 20-3000 cm −1 (0.6-90 THz) at RT; for the low and high temperature measurements the spectral range was reduced to 650 cm −1 .…”
Section: Methodsmentioning
confidence: 99%