Domain epitaxy of crystalline BeO films on GaN and ZnO substrates

Abstract

We demonstrated the growth of wurtzite‐crystalline beryllium oxide (BeO) thin films on GaN and ZnO substrates using atomic layer deposition (ALD). Single‐crystalline BeO were epitaxially grown on GaN. Despite the inherently large lattice mismatch of BeO and GaN atoms, the 6/5 and 7/6 domain‐matched structures dramatically reduced the residual strain in BeO thin films. On the other hand, the lattice mismatch of BeO and ZnO was not effectively accommodated in the mixed domains. X‐ray diffraction (XRD) confirmed the in‐plane crystallization of BeO‐on‐substrates in the (002){102}BeO||(002){102}Sub orientation and relaxation degrees of 20.8% (GaN), 100% (ZnO). The theoretical critical thicknesses of BeO for strain relaxation were 2.2 μm (GaN) and 1.6 nm (ZnO), calculated using a total film energy model. Transmission electron microscopy (TEM) and Fourier‐filtered imaging supported the bonding configuration and crystallinity of wurtzite BeO thin films on GaN and ZnO substrates.

Oriented Crystal Growth of La0.557Li0.330TiO3 in Bulk Ceramics Induced by LaAlO3 Single-Crystal Fibers

“…The interfacial binding energy, defined as the reversible energy required to separate the interface into two free surfaces, is considered as a fundamental quantity to characterize the strength and stability of the substrate/epitaxy interfaces, reflecting the ability of the epitaxial crystal growth. − In order to calculate the interfacial binding energy at the interfaces mentioned in Table , four LAO/LLTO coherent interface models (shown in Figure ) were selected to build the heterostructure interface as follows: for the LAO{100}–LLTO{100} heterostructure, a 1 × 1 unit cell of LAO{100} with a 2D rectangular cell of 7.56 × 7.56 Å and a 1 × 1 unit cell of LLTO{100} with a 2D rectangular cell of 7.75 × 7.75 Å were chosen. The lattice mismatch (where u and v indicate the two orthogonal directions on the plane surface) was as follows: δ u = δ v = −2.51%.…”

Super Kinetically Pseudocapacitive MnCo2S4 Nanourchins toward High‐Rate and Highly Stable Sodium‐Ion Storage

“…To investigate the realistic and overall redox mechanisms with respect to applying sodiation/desodiation potentials, we subject MCS nanostructures (MCS30) to in situ XRD investigation ( Figure a,b). The testing cell was rested before the process which manifest a strong/sharp and undeterred XRD pattern at ≈44° ascribed to beryllia cell window (BeO) 64. The reactions are described in four stages.…”

The effect of layer thickness on adsorption and catalytic activity of sandwich‐like ceramics

“…The obtained values of R 2 (Table 4) indicate that the reaction of hydrogen peroxide decomposition on samples 2Al/2Fe/2Al, 1Al/2Fe/1Al and all samples of series Fe-PVA is a reaction of the first (pseudo-first) order. The first-order relationship indicates that the rate-determining step in hydrogen peroxide decomposition can be described by (6). The reaction of hydrogen peroxide decomposition on 2Al/2Fe and 2Al/1Fe/2Al samples is a reaction of the second order.…”

“…The most common and well‐established methods for producing multilayer films are dip‐coating, 4 spin‐coating, 5 atomic layer deposition, 6 electrostatic layer‐by‐layer self‐assembly, 7 and magnetron sputtering 8 . The advantage of these methods is a smooth surface of the obtained coatings.…”