Domain pinning near a single-grain boundary in tetragonal and rhombohedral lead zirconate titanate films

Marincel, Daniel M.; Zhang, Huairuo; Britson, Jason; Belianinov, Alexei; Jesse, Stephen; Kalinin, Sergei V.; Chen, Lei; Rainforth, W. M.; Reaney, Ian M.; Randall, Clive A.; Trolier-McKinstry, Susan

doi:10.1103/physrevb.91.134113

Cited by 34 publications

(24 citation statements)

References 57 publications

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“…Figure shows a demonstration of how these factors can be strongly dependent on composition. The reduction in piezoelectric activity near a grain boundary occurs over a length scale of ~800 ± 70 nm around the boundary itself in tetragonal PbZr 0.45 Ti 0.55 O 3 and only half that distance (450 ± 30 nm) for a morphotropic phase boundary composition, PbZr 0.52 Ti 0.48 O 3 . This difference is likely to be due to the fact that the more complex domain structure possible at the morphotropic phase boundary means that local stresses and fields can be accommodated in a smaller volume .…”

Section: Domain Grain Size and Thickness Scaling Effectsmentioning

confidence: 94%

“…Several groups have performed PFM characterization across grain boundaries in epitaxial films on bicrystal substrates. Bicrystal substrates enable properties near grain boundaries with preselected misorientation to be characterized . PFM data recorded across a 24° crystallographic tilt about [001] pc (where pc denotes pseudocubic indices) in BiFeO 3 demonstrated that grain boundaries can attract nearby domain walls and restrict the growth of the energetically preferred polarization direction .…”

Section: Domain Grain Size and Thickness Scaling Effectsmentioning

confidence: 97%

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Scaling Effects in Perovskite Ferroelectrics: Fundamental Limits and Process‐Structure‐Property Relations

et al. 2016

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Ferroelectric materials are well‐suited for a variety of applications because they can offer a combination of high performance and scaled integration. Examples of note include piezoelectrics to transform between electrical and mechanical energies, capacitors used to store charge, electro‐optic devices, and nonvolatile memory storage. Accordingly, they are widely used as sensors, actuators, energy storage, and memory components, ultrasonic devices, and in consumer electronics products. Because these functional properties arise from a noncentrosymmetric crystal structure with spontaneous strain and a permanent electric dipole, the properties depend upon physical and electrical boundary conditions, and consequently, physical dimension. The change in properties with decreasing physical dimension is commonly referred to as a size effect. In thin films, size effects are widely observed, whereas in bulk ceramics, changes in properties from the values of large‐grained specimens is most notable in samples with grain sizes below several micrometers. It is important to note that ferroelectricity typically persists to length scales of about 10 nm, but below this point is often absent. Despite the stability of ferroelectricity for dimensions greater than ~10 nm, the dielectric and piezoelectric coefficients of scaled ferroelectrics are suppressed relative to their bulk counterparts, in some cases by changes up to 80%. The loss of extrinsic contributions (domain and phase boundary motion) to the electromechanical response accounts for much of this suppression. In this article, the current understanding of the underlying mechanisms for this behavior in perovskite ferroelectrics is reviewed. We focus on the intrinsic limits of ferroelectric response, the roles of electrical and mechanical boundary conditions, grain size and thickness effects, and extraneous effects related to processing. In many cases, multiple mechanisms combine to produce the observed scaling effects.

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Section: Domain Grain Size and Thickness Scaling Effectsmentioning

confidence: 94%

Section: Domain Grain Size and Thickness Scaling Effectsmentioning

confidence: 97%

Scaling Effects in Perovskite Ferroelectrics: Fundamental Limits and Process‐Structure‐Property Relations

et al. 2016

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“…[14] However, the stress fields associated with each domain wall can result in complex interactions with local defects -be these point defects, dislocations, other domain walls or grain boundaries-, limiting or enhancing the mobility of the domain wall itself. [15,16] In fact, recent studies have illustrated the unexpectedly large role of clamping on the electromechanical response of PZT thin films, suggesting the presence of nontrivial, large length-scales for strain interactions present in such samples. [17] Similarly, evidence has also been provided of avalanche-like behavior of multiple domain walls due to cooperative interactions across these large length scales in disordered ferroelectric thin films.…”

Section: Introductionmentioning

confidence: 99%

Local Probing of Ferroelectric and Ferroelastic Switching through Stress‐Mediated Piezoelectric Spectroscopy

Edwards

Brewer

Cao

et al. 2016

Adv Materials Inter

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Strain effects have a significant role in mediating classic ferroelectric behavior such as polarization switching and domain wall dynamics. These effects are of critical relevance if the ferroelectric order parameter is coupled to strain and is therefore, also ferroelastic. Here, switching spectroscopy piezoresponse force microscopy (SS‐PFM) is combined with control of applied tip pressure to exert direct control over the ferroelastic and ferroelectric switching events, a modality otherwise unattainable in traditional PFM. As a proof of concept, stress‐mediated SS‐PFM is applied toward the study of polarization switching events in a lead zirconate titanate thin film, with a composition near the morphotropic phase boundary with co‐existing rhombohedral and tetragonal phases. Under increasing applied pressure, shape modification of local hysteresis loops is observed, consistent with a reduction in the ferroelastic domain variants under increased pressure. These experimental results are further validated by phase field simulations. The technique can be expanded to explore more complex electromechanical responses under applied local pressure, such as probing ferroelectric and ferroelastic piezoelectric nonlinearity as a function of applied pressure, and electro‐chemo‐mechanical response through electrochemical strain microscopy.

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“…According to Figure C,F, it is found from the vertical PFM images that the domain size of 0.25BNT‐0.75PT (C) is smaller than that of 0.35BNT‐0.65PT (F). This may be caused by the defects at the grain boundary, which pins the movement of the domain wall, further limiting the growth of the domains …”

Section: Resultsmentioning

confidence: 99%

Lead‐reduced Bi(Ni_2/3Ta_1/3)O₃‐PbTiO₃ perovskite ceramics with high Curie temperature and performance

et al. 2018

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With increasing demand of high‐temperature piezoelectric devices and growing concern over environment protection, a feasible reduction in lead from lead‐based high Curie temperature piezoelectric materials are desperately needed. Herein, a new system of lead‐reduced Bi(Ni2/3Ta1/3)O3‐PbTiO3 (BNT‐PT) ferroelectric ceramics is fabricated by a conventional solid‐state sintering process. The phase transition behaviors as a function of composition and temperature, electrical properties, as well as the domain configurations from a microscopic level have been investigated in detail. The results indicate that crystal structures, phase transition behaviors, and electric properties of BNT‐PT ceramics can be affected significantly by the content of BNT counterpart. Dielectric measurements show that xBNT‐(1−x)PT ceramics transfer from the normal ferroelectrics to the relaxor ferroelectrics at compositions of x = 0.3‐0.35. The BNT‐PT ceramics exhibit high Curie temperature TC ranging from 474 to 185°C with the variation in BNT content. The relative dielectric tunability nr also rises from only 0.65% for 0.10BNT‐0.90PT to 50.23% for 0.40BNT‐0.60PT with increasing BNT content. The tetragonal‐rich composition 0.30BNT‐0.70PT ceramic possesses the maximum remnant polarization of Pr ~ 34.9 μC/cm2. Meanwhile, a highest piezoelectric coefficient of d33 ~ 271 pC/N and a high field piezoelectric strain coefficient of d33∗ ~ 560 pm/V are achieved at morphotropic phase boundary (MPB) composition of 0.38BNT‐0.62PT. The maximum value of strain ~0.31% is obtained in the 0.36BNT‐0.64PT ceramic. The largest electromechanical coupling coefficient kp is 44.5% for 0.37BNT‐0.63PT ceramic. These findings demonstrate that BNT‐PT ceramics are a system of high‐performance Pb‐reduced ferro/piezoelectrics, which will be very promising materials for piezoelectric devices. This study offers an approach to developing and exploring new lead‐reduced ferroelectric ceramics with high performances.

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Domain pinning near a single-grain boundary in tetragonal and rhombohedral lead zirconate titanate films

Cited by 34 publications

References 57 publications

Scaling Effects in Perovskite Ferroelectrics: Fundamental Limits and Process‐Structure‐Property Relations

Scaling Effects in Perovskite Ferroelectrics: Fundamental Limits and Process‐Structure‐Property Relations

Local Probing of Ferroelectric and Ferroelastic Switching through Stress‐Mediated Piezoelectric Spectroscopy

Lead‐reduced Bi(Ni_2/3Ta_1/3)O₃‐PbTiO₃ perovskite ceramics with high Curie temperature and performance

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Domain pinning near a single-grain boundary in tetragonal and rhombohedral lead zirconate titanate films

Cited by 34 publications

References 57 publications

Scaling Effects in Perovskite Ferroelectrics: Fundamental Limits and Process‐Structure‐Property Relations

Scaling Effects in Perovskite Ferroelectrics: Fundamental Limits and Process‐Structure‐Property Relations

Local Probing of Ferroelectric and Ferroelastic Switching through Stress‐Mediated Piezoelectric Spectroscopy

Lead‐reduced Bi(Ni2/3Ta1/3)O3‐PbTiO3 perovskite ceramics with high Curie temperature and performance

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Product

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Lead‐reduced Bi(Ni_2/3Ta_1/3)O₃‐PbTiO₃ perovskite ceramics with high Curie temperature and performance