2012
DOI: 10.1063/1.3684546
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Domain rotation induced strain effect on the magnetic and magneto-electric response in CoFe2O4/Pb(Mg,Nb)O3-PbTiO3 heterostructures

Abstract: Ion doping effects in multiferroic MnWO4 J. Appl. Phys. 111, 083906 (2012) Origin of ferromagnetism and oxygen-vacancy ordering induced cross-controlled magnetoelectric effects at room temperature J. Appl. Phys. 111, 073904 (2012) Synthesis and signature of M-E coupling in novel self-assembled CaCu3Ti4O12-NiFe2O4 nanocomposite structure J. Appl. Phys. 111, 074302 (2012) Quantum levitation of a thin magnetodielectric plate on a metallic plate using the repulsive Casimir force J. Appl. Phys. 111, 074304… Show more

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Cited by 34 publications
(34 citation statements)
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“…This illustrates the remarkably large out-of-plane magnetic anisotropy that is a result of the tensile strain and the extraordinary high negative magnetostriction of CFO due to the presence of unquenched orbital momentum in Co 2+ cations. 19,20 We find the shape of V SSE reflects the behavior of M , suggesting that the observed voltages clearly originate from the magnetic nature of the CFO films.…”
mentioning
confidence: 95%
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“…This illustrates the remarkably large out-of-plane magnetic anisotropy that is a result of the tensile strain and the extraordinary high negative magnetostriction of CFO due to the presence of unquenched orbital momentum in Co 2+ cations. 19,20 We find the shape of V SSE reflects the behavior of M , suggesting that the observed voltages clearly originate from the magnetic nature of the CFO films.…”
mentioning
confidence: 95%
“…2 in both, in-plane and out-of-plane field direction, gives nearly the same value of ~195 emu/cm 3 which is a usual value observed in CFO films. [16][17][18][19][20] The coercive field (H C ) for an inplane field (<10 mT) is significantly smaller than that for an out-of-plane field (180 mT). Also, the out-of-plane remanent magnetization (M R ) is considerable larger than in-plane.…”
mentioning
confidence: 99%
“…Artificial magnetoelectric systems seems to be a promising route for such control. The easiest artificial architecture for a magnetization voltage control in those kinds of materials appears to be the piezoelectric/magnetostrictive bilayers presenting a good strainmediated coupling at the interface [4][5][6][7][8][9][10][11][12]. However, in these systems, clamping effects due to the substrate limits the strain applicable by the piezoelectric environment to the magnetization and therefore reduces perspective on applications.…”
mentioning
confidence: 99%
“…So it is naturally to combined MFM and PFM together to characterize the magnetic and electric properties, and to provide evidences of the magneto-electric coupling in multiferroic materials. [25][26][27] Take BiFeO contrast indicates opposite orientation of the dipoles in the positive and the negative polarized regions. The bright yellow regions represent dipoles oriented downward to the substrate, while the dark purple regions correspond to the polarization upward.…”
Section: © 2017 Author(s) All Article Content Except Where Otherwismentioning
confidence: 99%