Domain state exchange bias in a single layer FeRh thin film formed <i>via</i> low energy ion implantation

Cress, Cory D.; Erve, Olaf van ‘t; Prestigiacomo, Joseph; LaGasse, Samuel W.; Glavic, Artur; Lauter, Valeria; Bennett, Steven

doi:10.1039/d2tc04014j

Cited by 10 publications

(2 citation statements)

References 38 publications

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“…[80] Using the in situ annealing capabilities of MAGREF in the available temperature range from 750 to 5 K, films were thermally annealed to well-defined intermediate states near the phase transition while being simultaneously measured with PNR. [81,82] For annealing at MAGREF, the same parameters as for ex situ treatment were applied, exposing the samples to a vacuum of 1 × 10 −6 mbar (absolute pressure) at 400 °C/ 450 °C and then cooling down to 300s and 120 K for PNR measurements. The incident neutron beam was polarized with spin up or spin down, i.e., parallel or anti-parallel to the direction of the magnetic field, respectively.…”

Section: Methodsmentioning

confidence: 99%

La_0.6Sr_0.4CoO_3−δ Films Under Deoxygenation: Magnetic And Electronic Transitions Are Apart from The Structural Phase Transition

He,

Petracic,

Lauter

et al. 2024

Adv Funct Materials

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Topotactic phase transitions induced by changes in the oxygen vacancy concentration can largely alter the physical properties of complex oxides, including electronic and magnetic phases, while maintaining the structural integrity of the crystal lattice. An oxygen‐vacancy‐induced topotactic phase transition from perovskite (PV) to brownmillerite (BM) is achieved in epitaxial La0.6Sr0.4CoO3−δ (LSCO) thin films. Two novel intermediate states with different oxygen content are identified by X‐ray diffraction, which involves a single‐phase reduced PV state and a mixed state of co‐existing PV and BM. The combination of depth‐sensitive polarized neutron reflectometry (PNR) and Rutherford backscattering (RBS) allows a quantitative determination of magnetization and the mean oxygen content in all states, revealing a continuous transition from La0.6Sr0.4CoO2.97 to La0.6Sr0.4CoO2.5. BM formation is observed for an LSCO layer with an oxygen content of 2.67, while the magnetic and electronic transition already occurs for a layer with a higher oxygen content of 2.77 (and above) and in the absence of a BM signature. These results demonstrate that the physics of electronic metal‐to‐insulator transition (MIT), magnetic ferromagnet‐to‐non‐ferromagnet transition (FM‐to‐non‐FM), and structural PV‐to‐BM phase transition should be considered within the framework of separate but interrelated processes.

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Section: Methodsmentioning

confidence: 99%

La_0.6Sr_0.4CoO_3−δ Films Under Deoxygenation: Magnetic And Electronic Transitions Are Apart from The Structural Phase Transition

He,

Petracic,

Lauter

et al. 2024

Adv Funct Materials

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“…Ion bombardment (in terms of implantation or irradiation) has been the subject of various studies [13][14][15] , to induce inter-atomic mixing and modify the magnetic properties [16][17][18][19][20][21][22][23][24][25] for various advancements. Researchers can precisely engineer material properties and create unique structural modifications by carefully adjusting ion energy, fluence, and species.…”

mentioning

confidence: 99%

Enhancing damping-like efficiency by low-energy mixed ions bombardment

Bhatti,

Das,

Shaik

et al. 2024

Applied Physics Letters

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Pursuing enhanced spin–orbit torque (SOT) has become a significant focus for achieving energy-efficient spintronics devices. Researchers have explored different materials, layer engineering, and various post-deposition modification methods to realize higher SOT. Here, we have utilized the bombardment of mixed ions (Ar+ and He+ in various ratios) with 0.6 kV bias voltage to enhance the SOT efficiency in a Pt/Co/W stack. The bombardment modifies the physical properties (magnetic, electric, and structural) due to cascade collision, knocking off atoms (from the surface), and ion implantation. The increased percentage of He+ suppresses the drastic behavior of cascade collisions, and hence, the properties are tunable by changing the gas ratio. We exploited this behavior to design a material stack with enhanced SOT efficiency. We fabricated Hall bars to quantify SOT and observed a 4.5× increase in the effective damping-like efficiency. The efficiency and switching current density in the stack could be tuned by the variation of Ar:He ion ratio and the exposure duration. This study offers an easy route to tune the energy efficiency of spin devices, contributing to the advancement of next-generation spintronics.

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Abnormal Magnetic Phase Transition in Mixed‐Phase (110)‐Oriented FeRh Films on Al₂O₃ Substrates via the Anomalous Nernst Effect

Choi,

Park,

Kim

et al. 2024

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Iron rhodium (FeRh) undergoes a first‐order anti‐ferromagnetic to ferromagnetic phase transition above its Curie temperature. By measuring the anomalous Nernst effect (ANE) in (110)‐oriented FeRh films on Al2O3 substrates, the ANE thermopower over a temperature range of 100–350 K is observed, with similar magnetic transport behaviors observed for in‐plane magnetization (IM) and out‐of‐plane magnetization (PM) configurations. The temperature‐dependent magnetization–magnetic field strength (M–H) curves revealed that the ANE voltage is proportional to the magnetization of the material, but additional features magnetic textures not shown in the M‐H curves remained intractable. In particular, a sign reversal occurred for the ANE thermopower signal near zero field in the mixed‐magnetic‐phase films at low temperatures, which is attributed to the diamagnetic properties of the Al2O3 substrate. Finite element method simulations associated with the Heisenberg spin model and Landau–Lifshitz–Gilbert equation strongly supported the abnormal heat transport behavior from the Al2O3 substrate during the experimentally observed magnetic phase transition for the IM and PM configurations. The results demonstrate that FeRh films on an Al2O3 substrate exhibit unusual behavior compared to other ferromagnetic materials, indicating their potential for use in novel applications associated with practical spintronics device design, neuromorphic computing, and magnetic memory.

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Domain state exchange bias in a single layer FeRh thin film formed via low energy ion implantation

Abstract: Modern spintronics relies heavily on the exchange bias effect to pin the orientation of ferromagnetic layers in magnetic tunnel junctions. The current implementation of exchange bias in magnetic tunnel junctions...

Cited by 10 publications

References 38 publications

La_0.6Sr_0.4CoO_3−δ Films Under Deoxygenation: Magnetic And Electronic Transitions Are Apart from The Structural Phase Transition

La_0.6Sr_0.4CoO_3−δ Films Under Deoxygenation: Magnetic And Electronic Transitions Are Apart from The Structural Phase Transition

Enhancing damping-like efficiency by low-energy mixed ions bombardment

Abnormal Magnetic Phase Transition in Mixed‐Phase (110)‐Oriented FeRh Films on Al₂O₃ Substrates via the Anomalous Nernst Effect

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Domain state exchange bias in a single layer FeRh thin film formed via low energy ion implantation

Abstract: Modern spintronics relies heavily on the exchange bias effect to pin the orientation of ferromagnetic layers in magnetic tunnel junctions. The current implementation of exchange bias in magnetic tunnel junctions...

Cited by 10 publications

References 38 publications

La0.6Sr0.4CoO3−δ Films Under Deoxygenation: Magnetic And Electronic Transitions Are Apart from The Structural Phase Transition

La0.6Sr0.4CoO3−δ Films Under Deoxygenation: Magnetic And Electronic Transitions Are Apart from The Structural Phase Transition

Enhancing damping-like efficiency by low-energy mixed ions bombardment

Abnormal Magnetic Phase Transition in Mixed‐Phase (110)‐Oriented FeRh Films on Al2O3 Substrates via the Anomalous Nernst Effect

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Product

Resources

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La_0.6Sr_0.4CoO_3−δ Films Under Deoxygenation: Magnetic And Electronic Transitions Are Apart from The Structural Phase Transition

La_0.6Sr_0.4CoO_3−δ Films Under Deoxygenation: Magnetic And Electronic Transitions Are Apart from The Structural Phase Transition

Abnormal Magnetic Phase Transition in Mixed‐Phase (110)‐Oriented FeRh Films on Al₂O₃ Substrates via the Anomalous Nernst Effect