Domain Structure and Magnetic Anisotropy in Ga1-xMnxAs

Welp, U.; Vlasko-Vlasov, Vitalii; Liu, X.; Furdyna, J. K.; Wójtowicz, T.

doi:10.1007/978-94-007-1007-8_34

Cited by 5 publications

(13 citation statements)

References 21 publications

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“…20 ⌽ remains close to zero for temperatures higher than T C / 2. In general, after optical excitation the new angle of the easy axes ⌽͑t͒ is determined by K c1 ͓T 0 + ⌬T͑t͒ , p 0 + ⌬p͑t͔͒ and K u ͓T 0 + ⌬T͑t͒ , p 0 + ⌬p͑t͔͒, where T 0 and p 0 are the initial ͑ambient͒ temperature and hole concentration.…”

Section: Experimental Results and Analysismentioning

confidence: 80%

“…As is presently understood, these differences may be due either to an enhancement of the hole concentration ⌬p, [25][26][27] or to a transient temperature elevation ͑⌬T͒, 20,25 or both. Below the Curie temperature T C the magnetic equilibrium configuration corresponds to an inplane orientation of the easy axis that can be specified by an angle ⌽ with respect to the ͓110͔ direction.…”

Section: Experimental Results and Analysismentioning

confidence: 99%

“…Note that the magnetization measurements show similar results as that described in considerable detail in earlier reports. 20 In this study we mainly investigate two ferromagnetic samples: sample A: Ga 0.964 Mn 0.036 As annealed at 286°C, with a Curie temperature T C Ϸ 80 K, and a thickness of 98 nm; and sample B: as-grown Ga 0.965 Mn 0.035 As with T C Ϸ 52 K and a thickness of 300 nm. Similar results were also observed on other ferromagnetic Ga 1−x Mn x As samples with different Mn concentrations x, as described below.…”

Section: Experimental Configurationmentioning

confidence: 99%

“…Thus, an estimate of the average light-induced temperature increase can be made to be ⌬T ϳ 1 K for T 0 = 10 K and I = I 0 . This causes a ϳ2% change in the anisotropy constants, 20 which is a small perturbation to the system. This small perturbation leads to a small but finite fluctuation in the magnetization at low pump fluences, and thus provides a basis for the theoretical analysis treated below.…”

Section: B Tr-moke Measurements At E Ph Less Than the Gaas Bandgap E Gmentioning

confidence: 99%

“…Below T C , it is known that ͉K c1 ͉ and K uz increase with decreasing temperature. 20,[25][26][27] Thus, according to Eq. ͑9͒, is expected to decrease as ͉K c1 ͉ and K uz are reduced.…”

Section: A Precessional Frequency and Amplitude Amentioning

confidence: 99%

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Ultrafast laser-induced coherent spin dynamics in ferromagneticGa1−xMnxAs/GaAsstructures

Steigerwald

et al. 2009

Phys. Rev. B

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Ultrafast pump-probe magneto-optical spectroscopy is used to study coherent spin dynamics in ferromagnetic semiconductor Ga 1−x Mn x As systems at excitation photon energies E ph both above and below the band gap E g of GaAs. Above E g , the temporal Kerr rotation signal is found to be strongly dependent on pump photon polarization. This polarization dependence, persisting to room temperature, is attributed to spins of electrons photoexcited to the conduction band, and disappears for E ph Ͻ E g . Below the Curie temperature T C of the Ga 1−x Mn x As samples, the temporal Kerr rotation acquires an additional oscillatory component with a period of the order of 100 ps, attributed to the precession of the ferromagnetically coupled Mn spins. This precession is observed for excitation both above and below E g , regardless of the pump polarization states. The detailed characteristics of this ferromagnetic precession are discussed in terms of the Landau-Lifshitz-Gilbert model. In discussing the observed results, special attention is given to the process of the magnetization precession due to excitation of the pump, to its dependence on the pump intensity, and ambient temperature, and to the relationship between the damping of the magnetization precession and the defects characteristic of ferromagnetic GaMnAs.

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Section: Experimental Results and Analysismentioning

confidence: 80%

Section: Experimental Results and Analysismentioning

confidence: 99%

Section: Experimental Configurationmentioning

confidence: 99%

Section: B Tr-moke Measurements At E Ph Less Than the Gaas Bandgap E Gmentioning

confidence: 99%

Section: A Precessional Frequency and Amplitude Amentioning

confidence: 99%

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Ultrafast laser-induced coherent spin dynamics in ferromagneticGa1−xMnxAs/GaAsstructures

Steigerwald

et al. 2009

Phys. Rev. B

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Non-volatile logic gates based on planar Hall effect in magnetic films with two in-plane easy axes

Lee

Bac

Choi

et al. 2017

Sci Rep

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We discuss the use of planar Hall effect (PHE) in a ferromagnetic GaMnAs film with two in-plane easy axes as a means for achieving novel logic functionalities. We show that the switching of magnetization between the easy axes in a GaMnAs film depends strongly on the magnitude of the current flowing through the film due to thermal effects that modify its magnetic anisotropy. Planar Hall resistance in a GaMnAs film with two in-plane easy axes shows well-defined maxima and minima that can serve as two binary logic states. By choosing appropriate magnitudes of the input current for the GaMnAs Hall device, magnetic logic functions can then be achieved. Specifically, non-volatile logic functionalities such as AND, OR, NAND, and NOR gates can be obtained in such a device by selecting appropriate initial conditions. These results, involving a simple PHE device, hold promise for realizing programmable logic elements in magnetic electronics.

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GaMnAs-based hybrid multiferroic memory device

Overby

Чернышов

Rokhinson

et al. 2008

Applied Physics Letters

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101

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A rapidly developing field of spintronics is based on the premise that substituting charge with spin as a carrier of information can lead to new devices with lower power consumption, non-volatility and high operational speed. Despite efficient magnetization detection, magnetization manipulation is primarily performed by current-generated local magnetic fields and is very inefficient. Here we report a novel non-volatile hybrid multiferroic memory cell with electrostatic control of magnetization based on strain-coupled GaMnAs ferromagnetic semiconductor and a piezoelectric material. We use the crystalline anisotropy of GaMnAs to store information in the orientation of the magnetization along one of the two easy axes, which is monitored via transverse anisotropic magnetoresistance. The magnetization orientation is switched by applying voltage to the piezoelectric material and tuning magnetic anisotropy of GaMnAs via the resulting stress field.Comment: 4 pages, 5 figure

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Domain Structure and Magnetic Anisotropy in Ga1-xMnxAs

Cited by 5 publications

References 21 publications

Ultrafast laser-induced coherent spin dynamics in ferromagneticGa1−xMnxAs/GaAsstructures

Ultrafast laser-induced coherent spin dynamics in ferromagneticGa1−xMnxAs/GaAsstructures

Non-volatile logic gates based on planar Hall effect in magnetic films with two in-plane easy axes

GaMnAs-based hybrid multiferroic memory device

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