Domain Structure and Magnetization Reversal Micromechanisms in Quasi-Two-Dimensional Exchange-Biased Nanomagnetics

Gornakov, V. S.; Шашков, И. В.; Lebyodkin, M.A.; Lebedkina, Tatiana

doi:10.1134/s1063783418110082

Cited by 2 publications

(1 citation statement)

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“…The observed type of the asymmetry can be attributed to the occurrence of an exchange spring in the AFM layer [ 41 ], because it is energetically more favorable to deform the antiferromagnet rather than to break the interfacial exchange coupling. In this case, the domain wall parallel to the interface in the AFM layer can contribute to the magnetization reversal [ 19 , 22 , 29 , 42 , 43 ]. In general, this effect is possible for promotion of a partial domain wall [ 23 ].…”

Section: Resultsmentioning

confidence: 99%

Complex Study of Magnetization Reversal Mechanisms of FeNi/FeMn Bilayers Depending on Growth Conditions

et al. 2022

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Magnetization reversal processes in the NiFe/FeMn exchange biased structures with various antiferromagnetic layer thicknesses (0–50 nm) and glass substrate temperatures (17–600 °C) during deposition were investigated in detail. Magnetic measurements were performed in the temperature range from 80 K up to 300 K. Hysteresis loop asymmetry was found at temperatures lower than 150 K for the samples with an antiferromagnetic layer thickness of more than 10 nm. The average grain size of FeMn was found to increase with the AFM layer increase, and to decrease with the substrate temperature increase. Hysteresis loop asymmetry was explained in terms of the exchange spring model in the antiferromagnetic layer.

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