Domain wall pinning for racetrack memory using exchange bias

Polenciuc, I.; Vick, Andrew; Allwood, D. A.; Hayward, Thomas J.; Vallejo-Fernández, G.; Hirohata, Atsufumi; O'Grady, K.

doi:10.1109/intmag.2015.7156497

Cited by 11 publications

(11 citation statements)

References 5 publications

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“…This capability can be used to stabilize skyrmions at room temperature (RT) without external magnetic fields [ 21 , 22 , 23 ]. The EB effect induced by coupling FM with AFO might be particularly important to domain wall (DW) pinning [ 24 ], which is essential for the stabilization and optimization of the DW movement in racetrack memories [ 25 , 26 ].…”

Section: Introductionmentioning

confidence: 99%

Strong Interfacial Perpendicular Magnetic Anisotropy in Exchange-Biased NiO/Co/Au and NiO/Co/NiO Layered Systems

et al. 2021

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The ability to induce and control the perpendicular magnetic anisotropy (PMA) of ferromagnetic layers has been widely investigated, especially those that offer additional functionalities (e.g., skyrmion stabilization, voltage-based magnetization switching, rapid propagation of domain walls). Out-of-plane magnetized ferromagnetic layers in direct contact with an oxide belong to this class. Nowadays, investigation of this type of system includes antiferromagnetic oxides (AFOs) because of their potential for new approaches to applied spintronics that exploit the exchange bias (EB) coupling between the ferromagnetic and the AFO layer. Here, we investigate PMA and EB effect in NiO/Co/Au and NiO/Co/NiO layered systems. We show that the coercive and EB fields increase significantly when the Co layer is coupled with two NiO layers, instead of one. Surrounding the Co layer only with NiO layers induces a strong PMA resulting in an out-of-plane magnetized system can be obtained without a heavy metal/ferromagnetic interface. The PMA arises from a significant surface contribution (0.74 mJ/m2) that can be enhanced up to 0.99 mJ/m2 by annealing at moderate temperatures (~450 K). Using field cooling processes for both systems, we demonstrate a wide-ranging control of the exchange bias field without perturbing other magnetic properties of importance.

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Section: Introductionmentioning

confidence: 99%

Strong Interfacial Perpendicular Magnetic Anisotropy in Exchange-Biased NiO/Co/Au and NiO/Co/NiO Layered Systems

et al. 2021

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“…Exchange bias has been proposed to create DW pinning sites enabling the development of solid state magnetic memories [16]. Using crossed ferromagnetic and antiferromagnetic wires such that exchange bias can be introduced at the intersection, pinning field strength up to 37 Oe has been achieved.…”

Section: Introductionmentioning

confidence: 99%

Domain wall engineering through exchange bias

Albisetti

Petti

2016

Journal of Magnetism and Magnetic Materials

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The control of the structure and position of magnetic domain walls is at the basis of the development of different magnetic devices and architectures. Several nanofabrication techniques have been proposed to geometrically confine and shape domain wall structures; however, a fine tuning of the position and micromagnetic configuration is hardly achieved, especially in continuous films. This work shows that, by controlling the unidirectional anisotropy of a continuous ferromagnetic film through exchange bias, domainwalls whose spin arrangement is generally not favored by dipolar and exchange interactions can be created. Micromagnetic simulations reveal that the domain wall width, position and profile can be tuned by establishing an abrupt change in the direction and magnitude of the exchange bias field set in the system

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“…Tuning the properties of nanowire locally to pin domain wall at precise position is more efficient for domain wall devices. Exchange bias has been proposed as one such method 32 . Several other methods to tune the properties of ferromagnetic, like focused Ga + ion irradiation on film, non-magnetic metal doped in ferromagnetic film by ion implantation or co-deposition have also been reported 33 – 37 .…”

Section: Introductionmentioning

confidence: 99%

Tuning magnetic properties for domain wall pinning via localized metal diffusion

Jin

Ranjbar

et al. 2017

Sci Rep

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Precise control of domain wall displacement in nanowires is essential for application in domain wall based memory and logic devices. Currently, domain walls are pinned by creating topographical notches fabricated by lithography. In this paper, we propose localized diffusion of non-magnetic metal into ferromagnetic nanowires by annealing induced mixing as a non-topographical approach to form pinning sites. As a first step to prove this new approach, magnetodynamic properties of permalloy (Ni80Fe20) films coated with different capping layers such as Ta, Cr, Cu and Ru were investigated. Ferromagnetic resonance (FMR), and anisotropy magnetoresistance (AMR) measurements were carried out after annealing the samples at different temperatures (T an). The saturation magnetization of Ni80Fe20 film decreased, and damping constant increased with T an. X-Ray photoelectron spectroscopy results confirmed increased diffusion of Cr into the middle of Ni80Fe20 layers with T an. The resistance vs magnetic field measurements on nanowires showed intriguing results.

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Domain wall pinning for racetrack memory using exchange bias

Cited by 11 publications

References 5 publications

Strong Interfacial Perpendicular Magnetic Anisotropy in Exchange-Biased NiO/Co/Au and NiO/Co/NiO Layered Systems

Strong Interfacial Perpendicular Magnetic Anisotropy in Exchange-Biased NiO/Co/Au and NiO/Co/NiO Layered Systems

Domain wall engineering through exchange bias

Tuning magnetic properties for domain wall pinning via localized metal diffusion

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