1981
DOI: 10.1109/tmag.1981.1061742
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Domain-wall vibrations

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Cited by 120 publications
(172 citation statements)
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“…This is similar to previous single domain approximation for nanodisk arrays [10]. Assuming a two current model for the tunneling electrons [11] and with the knowledge of the exchange energy due to electron tunneling [12,13] between PL and FL, we obtained the exchange field exerted by one monolayer of PL over the FL. The exchange energy, ex E , and the spin torque, s t , which decide the switching current requirement for flipping the memory element, depend on the insulator's barrier height [11].…”
supporting
confidence: 73%
See 1 more Smart Citation
“…This is similar to previous single domain approximation for nanodisk arrays [10]. Assuming a two current model for the tunneling electrons [11] and with the knowledge of the exchange energy due to electron tunneling [12,13] between PL and FL, we obtained the exchange field exerted by one monolayer of PL over the FL. The exchange energy, ex E , and the spin torque, s t , which decide the switching current requirement for flipping the memory element, depend on the insulator's barrier height [11].…”
supporting
confidence: 73%
“…2. 3 Exchange field and spin torque The exchange energy per unit area due to a single electron tunneling from PL to FL at T = 0 K, is given in terms of the reflection coefficients of Bloch waves at the interface [12,13]…”
Section: Original Papermentioning
confidence: 99%
“…where γ = 2μ B / is the gyromagnetic ratio, and μ B is the Bohr magneton. The spin-torque [23] I S is generated by the non-equilibrium current, and thus is a nonconservative force. Without the spin torque, the magnetic moment precesses around the z-axis with the frequencyφ = γ H K cos θ ≡ along a constant energy trajectory determined by Eq.…”
Section: Application To a Magnetization Switching Problemmentioning
confidence: 99%
“…1 Introduction Over the past years, the discovery of the spin transfer torque (STT) effect has attracted a lot of attention due to promising applications for magnetic switching and high-frequency oscillators in magnetic devices with nanometer dimensions. This phenomenon has been predicted first on theoretical grounds in 1996 [1][2][3] and is widely studied in patterned magnetic thin films [4,5], in multilayer based mechanical point contacts [6] and in pillar-like structures [7][8][9][10]. As the complementary effect to the giant magnetoresistance (GMR) [11,12], the STT effect manifests itself in magnetization switching when using spin-polarized electric currents with high density above 10 7 A/cm 2 .…”
mentioning
confidence: 99%