Dominant near infrared light-emitting diodes based on p-NiO/n-InN heterostructure on SiC substrate

Wang, Hui; Zhao, Yang; Li, Xinzhong; Zhen, Ziyang; Li, Qiuze; Li, Hehe; Wang, Jingge; Tang, Miaomiao

doi:10.1016/j.jallcom.2017.11.298

Cited by 9 publications

(5 citation statements)

References 27 publications

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“…The Eg for the InN samples marked A-D sputtered at the power of 80, 90, 100, and 110 W, respectively, was found to be 1.83, 1.82, 1.78 and 1.77 ev, respectively. These values of bandgap indicated that the as-grown InN materials could be used in the filed of near infrared photodetectors and light emitting diodes 18,5 . Moreover, the value of the bandgap was in according with the reported results (1.60-1.90 eV) obtained by Felip et al using the radio frequency sputtering 19 .…”

Section: Resultsmentioning

confidence: 91%

“…Indium nitride, as a kind of novel material among the III-V group nitrides, has been broadly applied in the fields of high-speed electronic devices, high efficiency solar cells, infrared light emitting diodes and laser diodes [1][2][3][4] . It has lower effective electron mass, higher saturation electron drift rate and higher electron mobility, which make it ideal for the development of the above optoelectronic devices [5][6][7] . However, the growth of high-quality InN films is difficult due to the lower decomposition temperature of InN (~550℃) 8 .…”

Section: Introductionmentioning

confidence: 99%

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Effect of Sputtering Power on the Structural and Optical Properties of Inn Nanodots on Al2O3 by Magnetron Sputtering

Zhang

Zhou

et al. 2019

Mat. Res.

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In this work, we reported the effects of sputtering power on the structure, optical and electrical properties of InN nanodots prepared on Al2O3 substrate by magnetron sputtering.The results showed that the as-grown InN films exhibited uniform nanodot morphology and the size of the InN nano grains increased with the sputtering power was increased. The InN nanodot exhibited highly c-axis prefered orientation with mainly InN (002) diffraction. The optical band gap of InN samples showed an decreasing trend with the increase in sputteirng power. Moreover, the electrical properties of the InN samples were discussed in detail by hall effect and the carrier concentration and mobility could be adjusted from 3.233×1019 to 1.655×1020 cm-3 and 1.151 to 10.101 cm2/v•s, respectively. These results will lay a good fundation for the applicaion of InN material in the field of gas sensers and light emitting diodes.

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Section: Resultsmentioning

confidence: 91%

Section: Introductionmentioning

confidence: 99%

Effect of Sputtering Power on the Structural and Optical Properties of Inn Nanodots on Al2O3 by Magnetron Sputtering

Zhang

Zhou

et al. 2019

Mat. Res.

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“…The test shows that when the InN buffer layer is introduced at a deposition temperature of 100 °C, the diffraction peak strength is significantly stronger than that at other temperatures. The InN film sample grows perpendicular to the substrate, which presents a high c-axis preferred orientation [28][29][30][31]. The test shows that when the InN buffer layer is introduced at a deposition temperature of 100 • C, the diffraction peak strength is significantly stronger than that at other temperatures.…”

Section: Analysis Of Grain Sizementioning

confidence: 98%

“…The test shows that when the InN buffer layer is introduced at a deposition temperature of 100 • C, the diffraction peak strength is significantly stronger than that at other temperatures. The InN film sample grows perpendicular to the substrate, which presents a high c-axis preferred orientation [28][29][30][31].…”

Section: Analysis Of Grain Sizementioning

confidence: 99%

Study on the Performance Impact of Introducing an InN Buffer Layer at Various Deposition Temperatures on InN Film Grown by ECR-PEMOCVD on Free-Standing Diamond Substrate

2022

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In this study, InN films are grown at a relatively low temperature by electron cyclotron resonance plasma-enhanced metal organic chemical vapor deposition (ECR-PEMOCVD) on free-standing diamond substrates. Due to the high lattice mismatch rate between InN film and the free-standing diamond substrate, the function of a buffer layer is to build a bridge between the substrate and film to reduce the lattice mismatch between them. Therefore, here, we study the performance impact of introducing an InN buffer layer at various deposition temperatures and explore the optimal buffer layer deposition temperature used to grow relatively high-quality InN films. The experimental results show that when an InN buffer layer is introduced at a deposition temperature of 100 °C, the growth direction of the InN film is perpendicular to the substrate with a high c-axis preferred orientation, the roughness of the surface is minimal, and the particle sizes are consistent with growth in the same direction. Additionally, the carrier mobility is highest, and the carrier concentration is lowest compared with other conditions.

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“…However, when the bandgap of InN nanosheets was corrected to 0.7 eV [91,92], it attracted attention because it could be a promising material in the field of near-infrared luminescent devices [93,94] and lasers [95,96]. Moreover, InN presents the highest electron mobility and saturated electron drift rate among all III-nitride semiconductors [97], suggesting that InN nanosheets may be a potential candidate for infrared detectors [98][99][100], tera-hertz devices [101,102] and high-frequency solar cells [103,104]. Dan et al used the Heyd-Scuseria-Ernzerhof (HSE06) functional to obtain the optical absorption energy and concluded that, in the near-infrared range, an absorption peak of 1.49 eV for InN nanosheets yields a blue shift compared to wurtzite and zinc-blende InN [82].…”

Section: Optical Propertiesmentioning

confidence: 99%

Recent progress in III-nitride nanosheets: properties, materials and applications

Huang

Wang

et al. 2021

Semicond. Sci. Technol.

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As compared with their bulk materials, III-nitride nanosheets, including gallium nitride, aluminium nitride, indium nitride, reveal wider bandgap, enhanced optical properties, anomalously temperature-dependent thermal conductivity, etc, which are more suitable for the fabrication of nano-photodetectors, nano-field electron transistors, etc, for the application in the fields of nano-optoelectronics and nano-electronics. Although the properties of III-nitrides have been predicted based on the first-principles calculation, the experimental realization of III-nitride nanosheets has been restricted primarily due to dangling bonds on the surface and strong built-in electrostatic field caused by wurtzite/zinc-blende structures. To tackle these issues, several effective approaches have been introduced, and the distinct progress has been achieved during the past decade. In this review, the simulation and prediction of properties of III-nitride nanosheets are outlined, and the corresponding solutions and novel developed techniques for realisation of III-nitride nanosheets and defect control are discussed in depth. Furthermore, the corresponding devices based on the as-grown III-nitride nanosheets are introduced accordingly. Moreover, perspectives toward the further development of III-nitrides nanosheets and devices are also discussed.

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Dominant near infrared light-emitting diodes based on p-NiO/n-InN heterostructure on SiC substrate

Cited by 9 publications

References 27 publications

Effect of Sputtering Power on the Structural and Optical Properties of Inn Nanodots on Al2O3 by Magnetron Sputtering

Effect of Sputtering Power on the Structural and Optical Properties of Inn Nanodots on Al2O3 by Magnetron Sputtering

Study on the Performance Impact of Introducing an InN Buffer Layer at Various Deposition Temperatures on InN Film Grown by ECR-PEMOCVD on Free-Standing Diamond Substrate

Recent progress in III-nitride nanosheets: properties, materials and applications

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