Dominant role of grain boundary scattering in the resistivity of nanometric Cu films

Sun, Tik; Yao, Bo; Warren, Andrew P.; Barmak, K.; Toney, Michael F.; Peale, Robert E.; Coffey, Kevin R.

doi:10.1103/physrevb.79.041402

Cited by 105 publications

(78 citation statements)

References 16 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…One question that was not answered in the Sun et al [2][3][4] analysis, however, was whether twin boundaries in Cu contribute significantly to the measured resistivity. Twin boundaries, denoted as R3 boundaries in the coincident site lattice (CSL) description of grain boundaries, 23 are special interfaces with a misorientation of 60 about the h111i crystallographic axis.…”

Section: Introductionmentioning

confidence: 95%

“…[2][3][4] Approximately 1000 grains were measured per sample, except for the SiO 2 -encapsulated film, for which fewer grains (approximately 200) were measured for comparison with prior reports. [2][3][4] The edge grains were excluded in determining grain size. The error on grain size is given at 95% confidence for the number of grains measured, as detailed in Ref.…”

Section: A Thin Film Deposition and Characterizationmentioning

confidence: 99%

“…[2][3][4] Briefly, the Cu films were sputter-deposited on Si (100) substrates with a 150 nm thick layer of thermally grown SiO 2 and cooled to À40 C by contact with a liquid nitrogen cooled Cu plate. The Cu layer was DC-sputtered from a 99.9999% pure Cu target.…”

Section: A Thin Film Deposition and Characterizationmentioning

confidence: 99%

“…Prior work by Sun et al [2][3][4] on SiO 2 and Ta/SiO 2 -encapsulated nanometric Cu films showed grain-boundary scattering to be the dominant mechanism contributing to the resistivity increase related to the classical size effect. These studies also showed a weaker, but still significant, contribution from surface scattering.…”

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

On twin density and resistivity of nanometric Cu thin films

Barmak

Darbal

et al. 2016

Journal of Applied Physics

Self Cite

View full text Add to dashboard Cite

Crystal orientation mapping in the transmission electron microscope was used to quantify the twin boundary length fraction per unit area for five Ta38Si14N48/SiO2 encapsulated Cu films with thicknesses in the range of 26–111 nm. The length fraction was found to be higher for a given twin-excluded grain size for these films compared with previously investigated SiO2 and Ta/SiO2 encapsulated films. The quantification of the twin length fraction per unit area allowed the contribution of the twin boundaries to the size effect resistivity to be assessed. It is shown that the increased resistivity of the Ta38Si14N48 encapsulated Cu films compared with the SiO2 and Ta/SiO2 encapsulated films is not a result of increased surface scattering, but it is a result of the increase in the density of twin boundaries. With twin boundaries included in the determination of grain size as a mean-intercept length, the resistivity data are well described by 2-parameter Matthiessen's rule summation of the Fuchs-Sondheimer and Mayadas Shatzkes models, with p and R parameters that are within experimental error equal to those in prior reports and are p = 0.48(+0.33/−0.31) and R = 0.27 ± 0.03.

show abstract

Section: Introductionmentioning

confidence: 95%

Section: A Thin Film Deposition and Characterizationmentioning

confidence: 99%

Section: A Thin Film Deposition and Characterizationmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

On twin density and resistivity of nanometric Cu thin films

Barmak

Darbal

et al. 2016

Journal of Applied Physics

Self Cite

View full text Add to dashboard Cite

show abstract

“…Interaction of electromagnetic waves with rough surfaces is an important topic in science and engineering: surface roughness is known to cause excessive electromagnetic power absorption, [1][2][3][4][5][6] and it is one of the major limiting factors to the performance of radio-frequency (RF) cavities and slow wave structures 3,[7][8][9][10][11][12] with an impact on communication systems, 1,8,11 particle accelerators, 1,9,13 and material characterization at microwave frequencies. 14, 15 The enhanced power loss due to surface and interface roughness exerts significant effects on signal integrity of microelectronic circuits.…”

Section: Introductionmentioning

confidence: 99%

Electromagnetic power absorption due to bumps and trenches on flat surfaces

Pérez‐Arancibia

Zhang

Bruno

et al. 2014

Journal of Applied Physics

View full text Add to dashboard Cite

This paper presents a study of the absorption of electromagnetic power that results from the interaction of electromagnetic waves and cylindrical bumps or trenches on flat conducting surfaces. Configurations are characterized by means of adequately selected dimensionless variables and parameters so that applicability to mathematically equivalent (but physically diverse) systems can be achieved easily. Electromagnetic fields and absorption increments caused by such surface defects are evaluated by means of a high-order integral equation method which resolves fine details of the field near the surface, and which was validated by fully analytical approaches in a range of computationally challenging cases. The computational method is also applied to problems concerning bumps and trenches on imperfect conducting planes for which analytical solutions are not available. Typically, we find that absorption is enhanced by the presence of the defects considered, although, interestingly, absorption can also be significantly reduced in some cases-such as, e.g., in the case of a trench on a conducting plane where the incident electric field is perpendicular to the plane. Additionally, it is observed that, for some small-skin-depths large-wavelengths, the absorption increment is proportional to the increase in surface area. Significant physical insight is obtained on the heating that results from various types of electromagnetic incident fields. V C 2014 AIP Publishing LLC. [http://dx

show abstract

Multication Transparent Conducting Oxides: Tunable Materials for Photovoltaic Applications

Jayaram¹

2018

Emerging Photovoltaic Materials

View full text Add to dashboard Cite

Dominant role of grain boundary scattering in the resistivity of nanometric Cu films

Cited by 105 publications

References 16 publications

On twin density and resistivity of nanometric Cu thin films

On twin density and resistivity of nanometric Cu thin films

Electromagnetic power absorption due to bumps and trenches on flat surfaces

Multication Transparent Conducting Oxides: Tunable Materials for Photovoltaic Applications

Contact Info

Product

Resources

About