Dominant role of many-body effects on the carrier distribution function of quantum dot lasers

Abstract

The effects of free-carrier-induced shift and broadening on the carrier distribution function are studied considering different extreme cases for carrier statistics (Fermi–Dirac and random carrier distributions) as well as quantum dot (QD) ensemble inhomogeneity and state separation using a Monte Carlo model. Using this model, we show that the dominant factor determining the carrier distribution function is the free carrier effects and not the choice of carrier statistics. By using empirical values of the free-carrier-induced shift and broadening, good agreement is obtained with experimental data of QD materials obtained under electrical injection for both extreme cases of carrier statistics.

Study and analysis of the optical absorption cross section and energy states broadenings in quantum dot lasers

“…Consequently, a number of studies have investigated the role of homogenous and inhomogeneous broadening in semiconductor quantum dot laser. However, most of these studies were theoretically conducted using set of rate equations for carriers and photons [ 10 , 11 , 12 , 13 ]. On the other hand, calculating optical absorption cross section in semiconductor quantum dot laser is a key factor, which in turn provides a relationship between optical density of the sample and the concentration of quantum dots [ 14 ].…”

Observation of stimulated emission from Rhodamine 6G-polymer aggregate adsorbed at foam interfaces

“…Due to the simplicity and low cost, a range of materials such as semiconductors [11], quantum dots [12], nanoparticles [13,14], liquid crystals [15,16], and biological tissue [17] have been used to prepare the structures capable of producing a random lasing effect. A controlled manipulation of the metal-metal oxide Original content from this work may be used under the terms of the Creative Commons Attribution 3.0 licence.…”

Size anisotropy inhomogeneity effects in state-of-the-art quantum dot lasers

“…The spectrum has a linewidth of 39meV and peak emission energy of 0.96eV. At higher temperatures the determination of QD carrier statistics is non-trivial 28 , and this critical detail will modify the form of the EL spectrum. This uncertainty notwithstanding, we note that the EL spectrum shows an asymmetry, with a tail to higher energies.…”