Dominantly epitaxial growth of graphene on Ni (1 1 1) substrate

Fogarassy, Zsolt; Rümmeli, Mark H.; Gorantla, Sandeep; Bachmatiuk, Alicja; Dobrik, Gergely; Biró, László Péter; Havancsák, K.; Lábár, János L.

doi:10.1016/j.apsusc.2014.06.197

Cited by 28 publications

(18 citation statements)

References 58 publications

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“…Escape of carbon atoms on the surface occurs through the favourable domain boundaries, which in the places of entrance to the surface form the nucleation sites for multilayer graphene growth along the Ni surface [25]. It should be noted that some grain boundaries act as a fast diffusion path or enhanced local carbon sources in comparison with diffusion through the bulk Ni.…”

Section: Resultsmentioning

confidence: 99%

“…For limiting the heterogeneity of graphene coating by CVD, several steps were taken to improve the structure of the deposited polycrystalline nickel substrate -for the approximation to the Ni single crystal structure [25]. The resulting coating was epitaxially grown graphene with areas up to 1 mm.…”

Section: Resultsmentioning

confidence: 99%

“…8 (c)). It should be noted that turbostratic packaging of graphene layers in the MLG grown on polycrystalline nickel is often shown by electron diffraction [25].…”

Section: Resultsmentioning

confidence: 99%

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Synthesis of Graphenic Carbon Materials on Nickel Particles with Controlled Quantity of Carbon

Grehov

Kalnacs

Mishnev

et al. 2016

Latvian Journal of Physics and Technical Sciences

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A cheap, comparatively simple and effective method is proposed for the large quantity production of the sheets of graphenic carbon materials (GCM) by annealing the mixture of nickel powder with a suitable carbon amount at the temperatures close to 1000 ºC. The number of graphene layers in the sheets of GCM may be varied by altering the amount of carbon in the mixture and parameters of annealing and drying of the obtained products. Samples of GCM were prepared in the form of heat-dried GCM paper and in the form of graphene sponge with freeze-drying. The appearance of GCM on the surface of Ni particles was identified using a scanning electron microscope (SEM) at a low accelerating voltage of 5 kV. The thickness and properties of the layers were investigated by electron microscopy and X-ray diffraction. The fabrication processes were carried out at the concentrations of added carbon from 0 to 1 at%. The results obtained are fully consistent with the well-known solid phase reactions of carbon dissolution in Ni at 1000 °C and graphene or graphite precipitation on the surface with cooling down to the room temperatures.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

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Synthesis of Graphenic Carbon Materials on Nickel Particles with Controlled Quantity of Carbon

Grehov

Kalnacs

Mishnev

et al. 2016

Latvian Journal of Physics and Technical Sciences

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“…Some studies have reported an increase in texturing in the (1 1 1) orientation by heating the substrate during thin film deposition [34]. To study the effects of substrate heating on texture, two 100 nm thick Ni films (Ni9 and Ni10) were grown at a substrate temperature of 450 °C.…”

Section: Substrate Heatingmentioning

confidence: 99%

Influence of buffer layers on Ni thin film structure and graphene growth by CVD

Ozceri

Selamet

2015

J. Phys. D: Appl. Phys.

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Buffer and/or adhesive layers were used to decrease the dewetting of Ni thin film at graphene growth temperatures of around 900 °C. Depositing a thin buffer (Al2O3) layer onto SiO2/Si substrate significantly reduced the dewetting effect and surface roughness of Ni catalyst film. Thin adhesive (Cr) layers with or without Al2O3 buffer layers increased the texturing in (1 1 1) orientation, which was promoted by growing at an elevated temperature (450 °C). The effects of pretreatment and growth temperature on crystal orientation, grain size and surface roughness of Ni film were analyzed. Our results indicated a large positive correlation coefficient between the film thickness and surface roughness for thinner and non-buffered films, and a negative correlation coefficient between the thickness and 900 °C -annealed film roughness for thicker and buffered films. The graphene coverage was greatly improved over the films grown with Al2O3 and/or Cr layers. In summary, we suggest that growing high quality, large area, 1- or 2-layer graphene on polycrystalline Ni transition metal thin film is optimized by using Al2O3 and/or Cr layers to reduce Ni dewetting, surface roughness, and groove depth while controlling grain size and texturing in (1 1 1) orientation by annealing at 900 °C.

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“…Sapphire crystals are widely used as substrates to grow metal films due to their high thermal and chemical stabilities, necessary for withstanding the harsh conditions of the CVD process required for the synthesis of high-quality graphene. [27][28][29][30] Single crystal iridium(111) films can be deposited by pulsed laser deposition (PLD) 24 and metal-organic CVD 31 on (0001) sapphire single crystals. Deposition of epitaxial iridium films on other orientations of sapphire was also reported by using the method of metal-organic CVD and an epitaxial relationship between different orientations a) Electronic mail: arti.pandey@desy.de b)…”

mentioning

confidence: 99%

Single orientation graphene synthesized on iridium thin films grown by molecular beam epitaxy

Pandey

Krausert

Franz

et al. 2016

Journal of Applied Physics

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Heteroepitaxial iridium thin films were deposited on (0001) sapphire substrates by means of molecular beam epitaxy, and subsequently, one monolayer of graphene was synthesized by chemical vapor deposition. The influence of the growth parameters on the quality of the Ir films, as well as of graphene, was investigated systematically by means of low energy electron diffraction, x-ray reflectivity, x-ray diffraction, Auger electron spectroscopy, scanning electron microscopy, and atomic force microscopy. Our study reveals (111) oriented iridium films with high crystalline quality and extremely low surface roughness, on which the formation of large-area epitaxial graphene is achieved. The presence of defects, like dislocations, twins, and 30° rotated domains in the iridium films is also discussed. The coverage of graphene was found to be influenced by the presence of 30° rotated domains in the Ir films. Low iridium deposition rates suppress these rotated domains and an almost complete coverage of graphene was obtained. This synthesis route yields inexpensive, air-stable, and large-area graphene with a well-defined orientation, making it accessible to a wider community of researchers for numerous experiments or applications, including those which use destructive analysis techniques or irreversible processes. Moreover, this approach can be used to tune the structural quality of graphene, allowing a systematic study of the influence of defects in various processes like intercalation below graphene.

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Dominantly epitaxial growth of graphene on Ni (1 1 1) substrate

Cited by 28 publications

References 58 publications

Synthesis of Graphenic Carbon Materials on Nickel Particles with Controlled Quantity of Carbon

Synthesis of Graphenic Carbon Materials on Nickel Particles with Controlled Quantity of Carbon

Influence of buffer layers on Ni thin film structure and graphene growth by CVD

Single orientation graphene synthesized on iridium thin films grown by molecular beam epitaxy

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