Donor-acceptor pair formation in InP doped simultaneously with Si and Zn during metalorganic chemical vapor deposition

Abstract

Deposition of InP by metalorganic chemical vapor deposition, simultaneously doped with both a donor (Si) and an acceptor (Zn) species during the growth, has been carried out. The incorporation of Si is not affected by the presence of Zn, but the Zn incorporation is substantially enhanced by the presence of Si. These results are consistent with the formation of donor-acceptor pairs, which has been suggested earlier to explain Zn diffusion profiles in Si-doped InP.

Donor-acceptor interactions in Al0.5In0.5P

“…For example, incorporation of both the deep-donor oxygen and the shallow-donor Te is enhanced in Mgdoped Al 0.5 In 0.5 P, while Mg has little or no effect on the incorporation of S and Si in Al 0.5 In 0.5 P. This observation regarding the effect of Mg on S or Si incorporation is consistent with previous reports in the literature, which indicate that both S and Si enhanced Zn incorporation in InP, but Zn did not enhance S or Si incorporation in InP. 10,13 The difference between the effect of Mg on the incorporation of these various donor species is not well understood.…”

“…[4][5][6][7][8][9][10][11][12][13] The observation of enhanced Mg incorporation in the presence of the deep-donor oxygen thus suggests that oxygen may also influence Mg diffusion in these samples. In fact, further inspection of the SIMS data in Fig.…”

“…With regard to such properties, we have previously demonstrated that the deep donor, oxygen, enhances Mg incorporation in Al 0.5 In 0.5 P. 3 Similar to our previous observations regarding Mg-oxygen interactions in Al 0.5 In 0.5 P, various other research groups have reported that shallow-donor species, such as S or Si, have enhanced acceptor incorporation in III-V semiconductors. [4][5][6][7][8][9][10][11][12][13] In addition to enhancing acceptor incorporation, such shallow-donor species have also been shown to suppress acceptor diffusion in III-V semiconductors, [4][5][6][7][8][9][10][11][12][13] thus providing motivation to investigate the potential impact of the deep donor, oxygen, on Mg diffusion in Al 0.5 In 0.5 P. In addition to this investigation of Mg-oxygen dopant interactions in Al 0.5 In 0.5 P, we also consider donor-acceptor interactions between Mg and the shallow donors, Te, S, and Si, to allow the reader to more effectively compare our results on Mg-oxygen dopant interactions to previous reports on dopant interactions between shallow donors and Zn or Mg acceptors. To the best of our knowledge, this paper offers the first detailed study of donor-acceptor interactions in Al 0.5 In 0.5 P, and it is also the first report we are aware of that compares the effect of deep-donor species to those of shallow-donor species on acceptor incorporation and diffusion in III-V semiconductors.…”

Surface organization of homoepitaxial InP films grown by metalorganic vapor-phase epitaxy

“…32 The incorporation of Si is proportional to the disilane flow and the incorporation efficiency is high, i.e., the silane flow needed to achieve our target doping levels is an order of magnitude lower than the TMIn flow. 33 However, Zn doping normally has a very low incorporation efficiency, 34,35 so less than 0.2% of the molecules injected into the reactor were incorporated into the crystal matrix with a molar ratio TMIn/DeZn ≈ 50.…”

Low temperature photoluminescence characteristics of Zn-doped InP grown by metalorganic chemical vapor deposition

“…Diffusion 1,2 and in situ doping 3,4 are normally used for Zn doping. It was reported that the hole concentration in Zn-diffused InP was 0.5%-10% of the total Zn concentration.…”