2024
DOI: 10.1007/s10825-024-02179-0
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Donor-induced electrically charged defect levels: examining the role of indium and n-type defect-complexes in germanium

Emmanuel Igumbor

Abstract: Defect levels induced by defect-complexes in Ge play important roles in device fabrication, characterization, and processing. However, only a few defect levels induced by defect-complexes have been studied, hence limiting the knowledge of how to control the activities of numerous unknown defect-complexes in Ge. In this study, hybrid density functional theory calculations of defect-complexes involving oversize atom (indium) and n-type impurity atoms in Ge were performed. The formation energies, defect-complex s… Show more

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