Dopant activation energy and hole effective mass in heavily Zn-Doped InP

Hansen, K.; Peiner, Erwin; Schlachetzki, A.; Ortenberg, M. von

doi:10.1007/bf02655368

Cited by 12 publications

(6 citation statements)

References 22 publications

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“…Adachi's method is also tested for the electron effective mass for n-InP data [33], which shows a similar trend. The same trend (effective mass decreasing with increasing temperature) is observed for electrons in n-InP, as reported by Schneider et al [33], and for holes in p-InP, as reported by Hansen et al [28].…”

Section: Resultssupporting

confidence: 86%

“…These variations are due to the characteristics of the semiconductor band structure, such as non-parabolicity and the splitting of the bands at valence band edges. Although there have been a few theoretical attempts to understand the temperature dependence of the effective mass [28], experimental studies in cryogenic temperatures are not yet reported for p-InP. The calculated density of states hole effective mass reported in [28] shows a 50% increase from room temperature to 80 K for 1 × 10 18 cm −3 .…”

Section: Resultsmentioning

confidence: 95%

“…Although there have been a few theoretical attempts to understand the temperature dependence of the effective mass [28], experimental studies in cryogenic temperatures are not yet reported for p-InP. The calculated density of states hole effective mass reported in [28] shows a 50% increase from room temperature to 80 K for 1 × 10 18 cm −3 . Due to the large density of states, heavy holes play a dominant role in optical transitions.…”

Section: Resultsmentioning

confidence: 95%

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Plasma frequency and dielectric function dependence on doping and temperature for p-type indium phosphide epitaxial films

Jayasinghe

Lao

Perera

et al. 2012

J. Phys.: Condens. Matter

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The optical properties of p-type InP epitaxial films with different doping concentrations are investigated by infrared absorption measurements accompanied by reflection and transmission spectra taken from 25 to 300 K. A complete dielectric function (DF) model, including intervalence band (IVB) transitions, free-carrier and lattice absorption, is used to determine the optical constants with improved accuracy in the spectral range from 2 to 35 μm. The IVB transitions by free holes among the split-off, light-hole, and heavy-hole bands are studied using the DF model under the parabolic-band approximation. A good understanding of IVB transitions and the absorption coefficient is useful for designing high operating temperature and high detectivity infrared detectors and other optoelectronic devices. In addition, refractive index values reported here are useful for optoelectronic device designing, such as implementing p-InP waveguides in semiconductor quantum cascade lasers. The temperature dependence of hole effective mass and plasma frequency is also reported.

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Section: Resultssupporting

confidence: 86%

Section: Resultsmentioning

confidence: 95%

Section: Resultsmentioning

confidence: 95%

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Plasma frequency and dielectric function dependence on doping and temperature for p-type indium phosphide epitaxial films

Jayasinghe

Lao

Perera

et al. 2012

J. Phys.: Condens. Matter

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“…[30][31][32]34 In view of the smooth merging of the donor states into conduction band and the formation of a band tail comprised at least partially of quasi-discrete states, the distinction between donor states and conduction-band states is not meaningful, and so the acceptor-related peak located at 1.38 eV will be referred to as the C-A peak. The energy separation between the C-A peak and the B-B peak is consistent with typical acceptor ionization energies such as that of zinc ͑E a ϳ50 meV͒, 3,35,36 which is a p-type dopant in the MOCVD system used to grow these samples. Though not visible on the scale of Fig.…”

Section: Photoluminescence Resultsmentioning

confidence: 51%

Reabsorption, band-gap narrowing, and the reconciliation of photoluminescence spectra with electrical measurements for epitaxial n-InP

Sieg

Ringel

1996

Journal of Applied Physics

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The effects of reabsorption and band-gap narrowing (BGN) on experimental photoluminescence (PL) spectra of n-InP grown by metalorganic chemical vapor deposition are analyzed. PL spectra show a pronounced widening of the main PL peak and a shift of that peak to higher photon energy with increasing doping due to band filling. However, the magnitude of these effects, both here and in earlier studies of n-type III–V semiconductors, is smaller than expected based upon band filling calculations and electrical measurements. Various explanations for these discrepancies between PL spectra and band filling calculations have been proposed, but little experimental support is currently available. In this article we demonstrate unambiguously that both the n-InP PL peak width and the peak position are significantly reduced by reabsorption, and that reabsorption completely explains the observed discrepancy between the measured PL peak width and the calculated band filling based on electrical measurements. In particular, we show that reabsorption must be accounted for when extracting the Fermi level from experimental n-InP PL spectra, otherwise the Fermi level value is severely underestimated. Since previous studies of the n-InP PL line shape have neglected reabsorption and instead attributed the unexpectedly low extracted Fermi level value to band-gap narrowing effects, we reinvestigate BGN in n-InP by considering only the low-energy tail of the PL spectra. The extent of the low-energy band tail below the intrinsic band-gap energy is observed to be only about half as large as n-InP BGN predicted theoretically. Very similar results have been reported in the literature for n-GaAs and is either due to an overestimation of the BGN by theory or a failure of PL to reflect the full extent of a highly nonrigid BGN shift. In regard to the latter, we demonstrate that a highly nonrigid BGN shift does indeed exist for n-InP, with the BGN shift near zone center being at least three times larger than the energy shift of states near the Fermi surface for n=4×1018 cm−3.

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“…We attribute the lower energy peak at 1.44 eV to radiative recombination from the conduction band to the Zn acceptor in the NWs. We calculated the activation energy of the Zn acceptor level for a doping concentration of 6.75 × 10 16 cm −3 obtained from EBIC measurements using the formula given by K. Hansen et al 46 E A = E 0 − a ( N A − ) 1/3 where E 0 is the ionisation energy (51 meV) and a = 3.9 × 10 −5 meV cm. This gives an activation energy of 35.1 meV which is the same as the energy difference between these peaks confirming that the lower energy peak is a result of Zn acceptor levels.…”

Section: Resultsmentioning

confidence: 99%