Dopant activation process in Mg-implanted GaN studied by monoenergetic positron beam

Uedono, Akira; Tanaka, Ryo; Takashima, Shinya; Ueno, Katsunori; Edo, Masaharu; Shima, Keisetsu; Kojima, Kazunobu; Chichibu, Shigefusa F.; Ishibashi, Shoji

doi:10.1038/s41598-021-00102-2

Cited by 18 publications

(10 citation statements)

References 35 publications

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“…3(b)] (similar like in VD-MOSFET, see Ref. 40). On the other hand, in the second scenario, the spreading of the current from the channel region into the drift region starts at the end of the depletion region surrounding the p-type regions [see line 2 in Fig.…”

Section: Grid-spacing Of the P-n Junctionsmentioning

confidence: 69%

“…After the ion implantation process and mask removal, the faceto-face UHPA process was conducted under a N 2 pressure of 500 MPa at temperature of 1300 °C for 30 min at JUTEM. After UHPA process, we found that the experimental Mgdepth profile determined from secondary ion mass spectrometry (SIMS) extended more deeply in the GaN bulk than those predicted by MC simulations probably due to the Mg defect-assisted vertical diffusion 40,44,45) (see Fig. 8(b).…”

Section: Fabrication Process and Mg Distribution In Jbs Diodementioning

confidence: 90%

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Design and fabrication of vertical GaN junction barrier Schottky rectifiers using Mg ion implantation

Matys

Kitagawa

Narita

et al. 2023

Jpn. J. Appl. Phys.

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In this review, we briefly summarize the major challenges and our recent progress in the development of GaN Junction Barrier Schottky (JBS) diodes using selective-area p-type doping with ion implantation and ultra high-pressure annealing (UHPA) process. As a starting point, we discuss the properties of Schottky contacts in the context of UHPA and provide design principle for a high performance JBS diode. Next, we propose a JBS diode having p-type regions formed by channeled ion implantation. This kind of device can provide ultra-low leakage currents and a much better trade-off between on-resistance (RON) and breakdown voltage (BV). Finally, we demonstrate our high-performance JBS diodes which exhibited the superior electrical characteristics (record low RON from 0.57 to 0.67 mOmegacm2 and high BV from 660 to 675 V) and nondestructive breakdown.

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Section: Grid-spacing Of the P-n Junctionsmentioning

confidence: 69%

Section: Fabrication Process and Mg Distribution In Jbs Diodementioning

confidence: 90%

Design and fabrication of vertical GaN junction barrier Schottky rectifiers using Mg ion implantation

Matys

Kitagawa

Narita

et al. 2023

Jpn. J. Appl. Phys.

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“…The same conclusion for Mg‐, H‐, and N‐implanted GaN before annealing was reported in refs. [32,36–39]. After annealing at 1000−1100 °C, the ( S , W ) value shifts to the right‐hand side and locates on the line connecting the ( S , W ) value for defect‐free GaN and ( V Ga V N ) 3 .…”

Section: Resultsmentioning

confidence: 92%

“…This suggests that the formation of Mg and H complexes is suppressed in this region. From annealing experiments for N‐implanted GaN, [ 39 ] it was found that N‐implantation decreased the size of vacancy clusters above 1200 °C annealing. This fact was attributed to the decrease in the number of V N due to the recombination between V N and excess N atoms.…”

Section: Resultsmentioning

confidence: 99%

Effect of Ultra‐High‐Pressure Annealing on Defect Reactions in Ion‐Implanted GaN Studied by Positron Annihilation

Uedono

Sakurai

Uzuhashi

et al. 2022

Physica Status Solidi (b)

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Herein, the annealing behaviors of defects in ion‐implanted GaN are studied by positron annihilation, cathodoluminescence, scanning transmission electron microscopy, and atom probe tomography. Si or Mg ions are implanted into GaN to obtain 300 nm deep box profiles of the impurities. The samples are annealed up to 1480 °C under a N2 pressure of 1 GPa. For as‐implanted GaN, the major defect species is identified as Ga‐vacancy‐type defects. After annealing above 1000 °C, vacancy clusters are introduced, and they remain even after 1480 °C annealing. For Mg‐implanted GaN with the Mg concentration ([Mg]) ≤ 1018 cm−3, no large change in the depth distribution of Mg is observed before and after annealing at 1400 °C. For the sample with [Mg] = 1019 cm−3, however, Mg diffuses into the bulk, which is attributed to the over‐doping of Mg and their vacancy‐assisted diffusion. The Mg diffusion is suppressed, and the donor–acceptor pair emission is enhanced by sequential N‐implantation, which is attributed to the reaction between Mg and vacancies under a N‐rich condition. For the samples annealed at 1480 °C, an accumulation of Mg around dislocation loops and Mg clustering are enhanced by the N‐implantation

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“…This suggests that the formation of Mg and H complexes is suppressed in this region. From annealing experiments for N-implanted GaN, 32 it was found that N-implantation decreased the size of vacancy clusters above 1200°C annealing. This fact was attributed to the decrease in the number of V N due to the recombination between V N and excess N atoms.…”

Section: Resultsmentioning

confidence: 99%

Annealing properties of vacancy-type defects in ion implanted GaN during ultra-high-pressure annealing studied by using a monoenergetic positron beam

Uedono

Sakurai²,

Uzuhashi³

et al. 2023

Gallium Nitride Materials and Devices XVIII

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Behaviors of vacancy-type defects in ion-implanted GaN were studied by means of positron annihilation. Si or Mg ions were implanted into GaN to obtain 300-nm-deep box profiles of the impurities. The ion-implanted samples were annealed up to 1480°C under a N 2 pressure of 1 GPa (ultra-high-pressure annealing: UHPA). For as-implanted GaN, the major defect species was identified as Ga-vacancy-type defects such as a divacancy (V Ga V N ). After annealing above 1000°C, vacancy clusters, such as (V Ga V N ) 3 , were introduced, and they were found to be remained even after 1480°C annealing. For Mg-implanted GaN with [Mg]=10 18 cm 3 , no large change in the depth distribution of Mg was observed before and after annealing at 1400°C. For the sample with [Mg]=10 19 cm 3 , however, Mg diffused into the bulk, which was attributed to the over-doping of Mg and their vacancy-assisted diffusion. The Mg diffusion was suppressed by sequential N-implantation, which was attributed to the reaction between Mg and vacancies under a N-rich condition. Interactions between vacancies, Mg, and H during UHPA were also discussed.

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Dopant activation process in Mg-implanted GaN studied by monoenergetic positron beam

Cited by 18 publications

References 35 publications

Design and fabrication of vertical GaN junction barrier Schottky rectifiers using Mg ion implantation

Design and fabrication of vertical GaN junction barrier Schottky rectifiers using Mg ion implantation

Effect of Ultra‐High‐Pressure Annealing on Defect Reactions in Ion‐Implanted GaN Studied by Positron Annihilation

Annealing properties of vacancy-type defects in ion implanted GaN during ultra-high-pressure annealing studied by using a monoenergetic positron beam

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