Dopant characterization of fin field-effect transistor structures using scanning capacitance microscopy

Khajetoorians, Alexander A.; Li, J.; Shih, Chih‐Kang; Wang, X.-D.; García-Gutiérrez, Domingo I.; José–Yacamán, Miguel; Pham, D.; Celio, Hugo; Diebold, Alain C.

doi:10.1063/1.2434000

Cited by 11 publications

(8 citation statements)

References 15 publications

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“…With a lock-in amplifier, scanning capacitance microscopy (SCM) sensitively detects differential capacitance (dC/dV) signals from material surfaces and map the dC/dV signal distribution (i.e., the SCM image), thereby qualitatively presenting material properties such as carrier type and concentration, [1][2][3][4][5] defect distribution, [6][7][8] ferroelectric domains, 9 device structures, [10][11][12] as well as dielectric quality. 13 Among these applications, the ones essential for the function of SCM are imaging carrier types and concentration profiles.…”

mentioning

confidence: 99%

Contrast distortion induced by modulation voltage in scanning capacitance microscopy

Chang¹,

Hu²,

Chou³

et al. 2012

Appl. Phys. Lett.

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With a dark-mode scanning capacitance microscopy (SCM), we directly observed the influence of SCM modulation voltage (MV) on image contrasts. For electrical junctions, an extensive modulated area induced by MV may lead to noticeable changes in the SCM signal phase and intensity, resulting in a narrowed junction image and a broadened carrier concentration profile. This contrast distortion in SCM images may occur even if the peak-to-peak MV is down to 0.3 V. In addition, MV may shift the measured electrical junction depth. The balance of SCM signals components explain these MV-induced contrast distortions

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mentioning

confidence: 99%

Contrast distortion induced by modulation voltage in scanning capacitance microscopy

Chang¹,

Hu²,

Chou³

et al. 2012

Appl. Phys. Lett.

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“…Accessing the sidewall is a difficult task, and some recent work has done so through cross-sectioning the fin. 4 Here, we mimic the FinFET sidewall system by implanting at various tilt angles on bulk silicon wafers, in order to facilitate secondary ion mass spectroscopy ͑SIMS͒ analysis with a fast turnaround time. Experiments were compared to simulations for further analysis and interpretation of the results.…”

Section: Introductionmentioning

confidence: 99%

Doping fin field-effect transistor sidewalls: Impurity dose retention in silicon due to high angle incident ion implants and the impact on device performance

Duffy

Curatola

Pawlak

et al. 2008

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Doping fin field-effect transistor sidewalls : impurity dose retention in silicon due to high angle incident ion implants and the impact on device performance Duffy, R.; Curatola, G.; Pawlak, B.J.; Doornbos, G.; Tak, van der, K.; Breimer, P.; Berkum, van, J.G.M.; Roozeboom, F. Please check the document version of this publication:• A submitted manuscript is the author's version of the article upon submission and before peer-review. There can be important differences between the submitted version and the official published version of record. People interested in the research are advised to contact the author for the final version of the publication, or visit the DOI to the publisher's website.• The final author version and the galley proof are versions of the publication after peer review.• The final published version features the final layout of the paper including the volume, issue and page numbers. Link to publication Citation for published version (APA):Duffy, R., Curatola, G., Pawlak, B. J., Doornbos, G., Tak, van der, K., Breimer, P., ... Roozeboom, F. (2008). Doping fin field-effect transistor sidewalls : impurity dose retention in silicon due to high angle incident ion implants and the impact on device performance. Journal of Vacuum Science and Technology, B: Microelectronics and Nanometer Structures--Processing, Measurement, and Phenomena, 26(1), 402-407. DOI: 10.1116/1.2816925 General rightsCopyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights.• Users may download and print one copy of any publication from the public portal for the purpose of private study or research.• You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal ? Take down policyIf you believe that this document breaches copyright please contact us providing details, and we will remove access to the work immediately and investigate your claim. The three dimensional ͑3D͒ nature of a fin field-effect transistor ͑FinFET͒ structure creates new challenges for an impurity doped region formation. For the triple gate FinFET, both top and side surfaces require high levels of dopant incorporation to minimize access resistance. In this work, we investigate the use of conventional ion implantation for the introduction of impurities in this 3D silicon structure. Specifically, we evaluate sidewall impurity dose retention at various angles of incidence. The retention of dose is determined by ͑i͒ trigonometry of the implant angle in the 3D fin system, ͑ii͒ backscattering, and ͑iii͒ material properties of the target surface. Dose retention is most sensitive to the implant angle. For a fixed implant projected range, lighter ions are more likely to be ejected from the target. Thus, heavier ions are better for...

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“…A detailed analysis of this sample by this technique can be found in Ref. 16. Relative contrast comparisons among the substrate, buried oxide ͑BOX͒, and fin give rise to the qualitative carrier profiles of the fin structures.…”

Section: Resultsmentioning

confidence: 99%

“…SCM has been applied to fin structures, demonstrating it can be used to qualitatively profile finFET-based structures. 16 However, no particular technique has been applied to high resolution quantitative cross-sectional profiling of finFETs.…”

Section: Introductionmentioning

confidence: 99%

Study of two-dimensional B doping profile in Si fin field-effect transistor structures by high angle annular dark field in scanning transmission electron microscopy mode

García-Gutiérrez¹,

José–Yacamán²,

Khajetoorians³

et al. 2006

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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High angle annular dark field in scanning transmission electron microscopy mode is used to characterize the two-dimensional B dopant profile of Si fin field-effect transistor nanostructures. We attribute the enhanced intensity in the images to the strain fields produced by the substitutional B atoms in the Si lattice. Two different doping cases were studied, with an increment in the ion dose level. The observed doping profiles were compared with scanning capacitance microscopy images and with computer simulations of the same structures. All results show excellent qualitative agreement. High resolution transmission electron microscopy, electron energy-loss spectroscopy, and energy-dispersive spectroscopy analyses were also performed on these samples and were instrumental in identifying Cu nanoparticle contamination in the prepared transmission electron microscopy samples.

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Dopant characterization of fin field-effect transistor structures using scanning capacitance microscopy

Cited by 11 publications

References 15 publications

Contrast distortion induced by modulation voltage in scanning capacitance microscopy

Contrast distortion induced by modulation voltage in scanning capacitance microscopy

Doping fin field-effect transistor sidewalls: Impurity dose retention in silicon due to high angle incident ion implants and the impact on device performance

Study of two-dimensional B doping profile in Si fin field-effect transistor structures by high angle annular dark field in scanning transmission electron microscopy mode

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