2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) 2013
DOI: 10.1109/sispad.2013.6650567
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Dopant dynamics and defects evolution in implanted silicon under laser irradiations: A coupled continuum and kinetic Monte Carlo approach

Abstract: Defect evolution and dopant dynamics in boron implanted silicon under excimer laser irradiation is investigated by means of continuous model and kinetic Monte Carlo (KMC) simulations. Both approaches rule the post-implant kinetics of the defects-dopant system in the extremely far from-the equilibrium conditions caused by the laser irradiation. The thermal problem has been solved within the phase-field methodology. Our model, based on the interaction between defects and the active/inactive impurities, elucidate… Show more

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