“…It has been suggested that dopant-free HTMs are advantageous for device stability,a st he dopantsc an be involved in degradation reactions. [34] Therefore different kinds of dopant-free hole-transport materials were developeda nd introduced into Pb-based PSCs. [35][36][37] In this report, we comparet he dopant-free polymer HTMs poly[[2,3-bis(3-octyloxyphenyl)-5,8-quinoxalinediyl]-2,5-thiophenediyl] (TQ1),p oly[N,N'-bis(2-hexyldecyl)isoindigo-6,6'-diyl-alt-3,3''-dioctyl-2,2',5',2''-terthiophene-5,5''-diyl] (P3TI), and P3HT for use in CsBi 3 I 10 -based solar cells.…”