Dopant source choice for formation of p-type ZnO: Li acceptor

Abstract

Li-doped, p-type ZnO thin films have been realized via dc reactive magnetron sputtering. An optimized result with a resistivity of 16.4Ωcm, Hall mobility of 2.65cm2∕Vs, and hole concentration of 1.44×1017cm−3 was achieved, and electrically stable over a month. Hall-effect measurements supported by secondary ion mass spectroscopy indicated that the substrate temperature played a key role in optimizing the p-type conduction of Li-doped ZnO thin films. Furthermore, ZnO-based p-n homojunction was fabricated by deposition of a Li-doped p-type ZnO layer on an Al-doped n-type ZnO layer.

High temperature carrier controlled ferromagnetism in alkali doped ZnO nanorods

“…For ZnO:Li, hole concentration and resistivity varied from 1.6ϫ 10 16 to 1.3 ϫ 10 19 cm −3 and 107.5 to 43.7 k ⍀ cm, respectively, for variation in Li concentration from 2% to 15%. 15 The results unambiguously indicate that the hole concentration increases and resistivity decreases with increase in Li concentration and accord with earlier reports 16,17 on Li doped ZnO thin film deposited at 500°C. These indicated effective substitution of Li in zinc sites leading to p-type conductivity.…”

“…These indicated effective substitution of Li in zinc sites leading to p-type conductivity. 16,17 The measured hole concentration was 7.5ϫ 10 16 cm −3 and resistivity 28.8 k⍀ cm for ZnO:Na ͑10 at %͒. Though such measurements for ZnO:Na are not available in literature, these values are similar to the values for ZnO:Li synthesized at 500°C.…”

“…Lower hole density ͑ϳ10 16 cm −3 ͒ produces maximum ferromagnetic coupling and Curie temperature ͑554 K͒. With increase in Li/Na concentration the resulting potential and hole density would destroy long range ferromagnetic order whereas local moments would still exist.…”

Synthesis of Silver-Doped Zinc Oxide Nanocomposite by Pulse Mode Ultrasonication and Its Characterization Studies

“…The main objective of synthesis is to produce particles only in nanorod structure for various toxicity and biological application studies. There are different doping agents like P [27], N [28], As [29], Li [30], Sb [31][32][33][34], and Ag [35]. Among these, we have taken Ag as doping agent.…”

p -type behavior in nominally undoped ZnO thin films by oxygen plasma growth

“…5 Fortunately, thanks to the considerable worldwide efforts, various elements have been used as p-type dopants for ZnO, such as N, 6-8 P, 9 As, 10 and Li. 11 However, it is the inexplicit p-type doping mechanism as well as the stability and reproducibility problems that become the bottleneck in the development of ZnO devices. In addition, there are a few reports on intrinsic p-type behavior in intentionally undoped ZnO, [12][13][14] in which the oxygen pressures were optimized.…”