Doped GeSe materials for selector applications

Abstract

We report on the thermal and electrical performance of nitrogen(N) and carbon(C) doped GeSe thin films for selector applications and tuning of their electrical performance. Doping GeSe successfully improved its thermal stability to 450C. Nitrogen doping led to decrease in off-state leakage and an increase in Vth, while Carbon doping increases leakage and reduces Vth. Hence, we show an effective method to tune the electrical parameters of GeSe selectors by using nitrogen and carbon as dopants.

Impact of changes in bond structure on ovonic threshold switching behaviour in GeSe2

“…Finally, the impact of doping on bond presence was explored. Two dopants were examined, Sb and N, based on previous work on Se rich Ge-Se materials 25,26 as well as theoretical calculations of the bond enthalpy using Pauling's equation 27 according to the work of Lankhorst et. al.…”

Modelling resistive and phase-change memory with passive selector arrays: a MATLAB tool

“…There have been several research works demonstrating ovonic threshold switching as a technology for realising selectors for resistive and phase-change memory arrays. The electrical characteristics of GeSe ovonic threshold switches were shown to be highly tunable with doping material and concentration, which makes them versatile for GST phase-change memory applications [26][27][28][29][30]. In addition, GeTe 6 was shown to have excellent electrical properties, but may not meet the thermal stability needed [31][32][33][34][35].…”

An Optically Gated Transistor Composed of Amorphous M + Ge2Se3 (M = Cu or Sn) for Accessing and Continuously Programming a Memristor

“…The variable resistance creates a variable voltage across the memristor due to the voltage divider and can lead to memristor device failure or a “stuck” state. Researchers have therefore been investigating alternate materials and devices to act as “selector” devices that can prevent sneak-path current in memristor arrays. , These include the ovonic threshold switch (OTS) , and other materials such as Cu-doped HfO 2 and Ag-based materials. − These selector materials are incorporated in series with the memristor and must be electrically driven to a state that allows the memristor to be either read (without perturbation) or programmed (higher or lower resistance). While the materials may vary, there are common themes among them.…”

“…Given the need for new selector device options, we have investigated the amorphous chalcogenide Ge 2 Se 3 , composed of alternating layers of doped/undoped material, to achieve an optically controlled selector device with current–voltage ( I – V ) properties similar to a light-gated transistor . The photoinduced properties of GeSe alloys have long been an area of research interest and have more recently been studied as electrically driven selector materials. , GeSe materials are known for their photoinduced responses, such as photoconductivity and photoinduced defects, as well as structural and morphological changes due to light exposure . More recently, crystalline GeSe 2 has been investigated for optoelectronic switching applications and as wide band gap materials for waveguides .…”

“…21 The photoinduced properties of GeSe alloys have long been an area of research interest and have more recently been studied as electrically driven selector materials. 15,16 GeSe materials are known for their photoinduced responses, such as photoconductivity and photoinduced defects, 22 as well as structural and morphological changes due to light exposure. 23 More recently, crystalline GeSe 2 has been investigated for optoelectronic switching applications 24 and as wide band gap materials for waveguides.…”