2015
DOI: 10.1016/j.nanoen.2015.04.029
|View full text |Cite
|
Sign up to set email alerts
|

Doped hole transport layer for efficiency enhancement in planar heterojunction organolead trihalide perovskite solar cells

Abstract: We demonstrated the efficiency of a solution-processed planar heterojunction organometallic trihalide perovskite solar cell can be increased to 17.5% through doping the hole transporting layer for reducing the resistivity. Doped Poly(triaryl amine) (PTAA) by 2,3,5,6-Tetrafluoro-7,7,8,8-Tetracyanoquinodimethane (F4-TCNQ) reduced device series resistance by three-folds, increasing the device fill factor to 74%, open circuit voltage to 1.09 V without sacrificing the short circuit current. This study reveals that … Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1
1
1

Citation Types

3
210
0
4

Year Published

2015
2015
2022
2022

Publication Types

Select...
6
4

Relationship

0
10

Authors

Journals

citations
Cited by 284 publications
(217 citation statements)
references
References 29 publications
3
210
0
4
Order By: Relevance
“…Note that for small-area active area (0.12 cm 2 ), which is close to a cell area often reported in literature, a PCE of 18.3% has been achieved (reverse scan), with a stabilized power output at PCE of 17.5% ( Figure S10, Supporting Information). This stabilized effi ciency output is amongst the best reported in the literature [ 23,28,53 ] for planar PSCs.…”
Section: Communicationsupporting
confidence: 61%
“…Note that for small-area active area (0.12 cm 2 ), which is close to a cell area often reported in literature, a PCE of 18.3% has been achieved (reverse scan), with a stabilized power output at PCE of 17.5% ( Figure S10, Supporting Information). This stabilized effi ciency output is amongst the best reported in the literature [ 23,28,53 ] for planar PSCs.…”
Section: Communicationsupporting
confidence: 61%
“…5(a), the PL intensity of the film formed from PbI 2 (DMSO) is approximately 30 times greater than that from PbI 2 film, indicating the loss due to the non-radiative recombination is about 30 times larger in PbI 2 system than in PbI 2 (DMSO). This excessive non-radiative recombination between the two systems can lead to an open-circuit voltage difference ΔV, and the voltage difference ΔV can be quantified via the PL intensity [54][55][56] [57,58]. We also optimized the PVSCs fabricated from PbI 2 (DMSO) with PTAA as HTL in this work.…”
Section: Resultsmentioning
confidence: 99%
“…We then deposit the hole-transporter material (HTM) of ∼20 nm thickness by spin-coating a solution of F4-TCNQ-doped poly-TPD (1-Material Inc.) following the work of Wang et.al. 35 Then the perovskite layer was prepared by spin-coating at 2000 rpm for 45s from as-prepared precursor solution, drying the substrates for 10 min on the bench in the glovebox, followed by annealing at 100 o C for 5 min. For the n-type 29 collection layers, PCBM (dissolved in DCB, 2 wt%) was spin-coated on top of the perovskite films at 1000 rpm for 30s.…”
Section: Device Fabricationmentioning
confidence: 99%