Doped Lateral Organic Photovoltaic Cells

Abstract

Doping effects on organic lateral photovoltaic cells with separated carrier‐generating and doped carrier‐transporting layers are investigated. A doping concentration of 100 ppm into the lateral hole and electron transporting layers doubles the photocurrent density by forming a built‐in potential between the layers in the vertical direction of the lateral cell, which accelerates carrier generation. A higher doping concentration induces trap‐assisted recombination at direct C8‐BTBT/PTCDI‐C8 contact points and causes a decrease in photocurrent density.