Doped ZnO 1D Nanostructures: Synthesis, Properties, and Photodetector Application

Abstract

In the past decades, the doping of ZnO one-dimensional nanostructures has attracted a great deal of attention due to the variety of possible morphologies, large surface-to-volume ratios, simple and low cost processing, and excellent physical properties for fabricating high-performance electronic, magnetic, and optoelectronic devices. This article mainly concentrates on recent advances regarding the doping of ZnO one-dimensional nanostructures, including a brief overview of the vapor phase transport method and hydrothermal method, as well as the fabrication process for photodetectors. The dopant elements include B, Al, Ga, In, N, P, As, Sb, Ag, Cu, Ti, Na, K, Li, La, C, F, Cl, H, Mg, Mn, S, and Sn. The various dopants which act as acceptors or donors to realize either p-type or n-type are discussed. Doping to alter optical properties is also considered. Lastly, the perspectives and future research outlook of doped ZnO nanostructures are summarized.

A straightforward and “green” solvothermal synthesis of Al doped zinc oxide plasmonic nanocrystals and piezoresistive elastomer nanocomposite

“…These synthesis processes are often used to obtain well-ordered crystal structure metaldoped ZnO diluted magnetic semiconductors, 23 photocatalysts, 24 photoanodes 25 and photodetectors. 22 Although these routes for synthesis of AZO nanomaterials have been studied in a number of earlier reports, [26][27][28][29][30][31][32][33][34][35] to the best of our knowledge, the availability of the LSPA effect in the produced samples has not been previously demonstrated for solvothermally or hydrothermally derived doped ZnO nanocrystals. Meanwhile, high electrical conductivity and LSPA absorption in the infrared range has been observed for high quality AZO, GZO and IZO colloidal nanocrystals obtained by hot-injection synthesis.…”

Investigation of localized and delocalized excitons in ZnO/ZnS core-shell heterostructured nanowires

“…As shown in Figure 3, the peak position of UV emission from Un-RTA ZnO/ZnS NWs is located at 3.284 eV, which is ascribed to the NBE emission from ZnO, and the peak position centered at approximately 2.2 eV is from the DLE [6,20,28]. Comparing with the Un-RTA sample, the UV peak positions of the RTA samples slightly change, while the UV and DLE intensity increase firstly and then decrease.…”

“…These greatly affect the performance of ZnO materials, especially for nanostructures that have a large surface-to-volume ratio. To solve the problem, strategies of new nanocomposite structures or passivating the surface of ZnO (such as the surface coating of organic polymers or epitaxial growth of heterogeneous semiconductors) have been proposed and carried out [20][21][22][23][24]. Among them, one of the most effective ways is the coreshell heterostructures.…”

An investigation into the influence of zinc precursor on the microstructural, photoluminescence, and gas-sensing properties of ZnO nanoparticles

“…The intensity of UV and visible emissions is higher for the ZnO_Oxi and ZnO_Nit samples. The lower intensity of the UV emission in ZnO samples has been attributed to the presence of a large amount of lattice interstitial defects (Ahmad et al 2011;Fan et al 2004;Hsu and Chang 2014) which were associated to the nature of zinc precursor.…”