Doping- and capacitor-less 1T-DRAM cell using reconfigurable feedback mechanism
Yuna Suh,
Doohyeok Lim
Abstract:In this paper, we propose a doping- and capacitor-less 1T-DRAM cell, which achieved virtual doping by leveraging charge plasma and bias-induced electrostatic doping (bias-ED) techniques in a 5-nm-thick intrinsic silicon body, thereby eliminating doping processes. Platinum was in contact with the drain, while aluminum was in contact with the source, enabling virtual doping of the silicon body into a p*-i-n* configuration via the charge-plasma technique. Two coupled polarity gates and one control gate are positi… Show more
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