Doping, Contact and Interface Engineering of Two‐Dimensional Layered Transition Metal Dichalcogenides Transistors

Zhao, Yuda; Xu, Kang; Pan, Feng; Zhou, Changjian; Zhou, Feichi; Chai, Yang

doi:10.1002/adfm.201603484

Cited by 228 publications

(219 citation statements)

References 153 publications

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“…Figure A shows the cross‐sectional schematic of the BP FET with Cu contacts. The contact between metal and semiconductor greatly affects the contact resistance and carrier type of devices . As the highly diffusive Cu may change the contact with BP, it is important to understand the interface between BP flake and Cu electrode.…”

Section: Resultsmentioning

confidence: 99%

“…Although the pristine BP has no dominant preference for carrier type, the extensively reported BP transistors exhibit p‐type dominant transport property due to the Fermi level pinning at the contacts and the suppressed electron transport caused by oxygen and moisture exposure . To realize low‐power complementary circuits, it is important to fabricate both p‐type and n‐type transistors with the same channel materials …”

Section: Introductionmentioning

confidence: 99%

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Interstitial copper‐doped edge contact for n‐type carrier transport in black phosphorus

Lin

Wang

Guo

et al. 2019

InfoMat

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Black phosphorus (BP) has been shown as a promising two‐dimensional (2D) material for electronic devices owing to its high carrier mobility. To realize complementary electronic circuits with 2D materials, it is important to fabricate both n‐type and p‐type transistors with the same channel material. By engineering the contact region with copper (Cu)‐doped BP, here we demonstrate an n‐type carrier transport in BP field‐effect transistors (FETs), which usually exhibit strongly p‐type characteristics. Cu metal atoms are found to severely penetrate into the BP flakes, which forms interstitial Cu (Cuint)‐doped edge contact and facilitates the electron transport in BP. Our BP FETs in back‐gated configuration exhibit n‐type dominant characteristics with a high electron mobility of ~ 138 cm2 V−1 s−1 at room temperature. The Schottky barrier height for electrons is relatively low because of the edge contact between Cuint‐doped BP and pristine BP channel. The contact doping of BP by highly mobile Cu atoms gives rise to n‐type transport property of BP FETs. Furthermore, we demonstrate a p‐n junction on the same BP flake with asymmetric contact. This strategy on contact engineering can be further extended to other 2D materials.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Interstitial copper‐doped edge contact for n‐type carrier transport in black phosphorus

Lin

Wang

Guo

et al. 2019

InfoMat

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“…Controlling the carrier type and density through modulation doping provides a way to switch between exciton-and trion-dominant PL and tune the PL intensity of 2D materials. 9 Various methods have been developed to dope 2D layered TMDs, 10 including substitutional doping during growth, 11 ion implantation, 12 plasma treating, 13 etc. Although these doping methods have been demonstrated to be effective, they inevitably result in the distortion of TMD crystal structures, introduce ionized impurity scattering canters, and degrade the charge mobility.…”

Section: Introductionmentioning

confidence: 99%

Modulation doping of transition metal dichalcogenide/oxide heterostructures

Wang

Zhao

et al. 2017

J. Mater. Chem. C

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Control of carrier type and carrier density provides a way to tune the physical properties of twodimensional (2D) semiconductors. Modulation doping of heterostructures can effectively inject carriers into or extract carriers from the 2D semiconductors, and eliminate the adverse effect from the ionized dopants. Here we first investigate the layer-dependent negative trion PL of 2D MoS 2 , and further construct heterostructures with transition metal dichalcogenides (TMDs) and transition metal oxides (TMOs). By choosing the oxide with different charge neutrality levels (CNLs), we demonstrate effective electron injection into MoS 2 by TiO 2 doping, and electron extraction from MoS 2 by MoO 3 doping.Photoluminescence (PL) spectra and electrical characterization show that thicker MoS 2 flakes are more easily n-doped by TiO 2 , while thinner MoS 2 flakes are more easily p-doped by MoO 3 . Our experimental results are in good agreement with theoretical calculations. The modulation doping with TMO is compatible with conventional Si processing and highly air-stable. This method can also be extended for the controllable doping of other 2D materials.

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“…[1][2][3][4][5][6][7][8][9][10][11][12][13][14] Among several types of devices, field effect transistors (FETs) with 2D channels must be the most important although their reported properties may not be compared to those of Si-based transistors yet. [1][2][3][4][5][6][7][8][9][10][11][12][13][14] Among several types of devices, field effect transistors (FETs) with 2D channels must be the most important although their reported properties may not be compared to those of Si-based transistors yet.…”

Section: Introductionmentioning

confidence: 99%

Advanced Multifunctional Field Effect Devices Using Common Gate for Both 2D Transition‐Metal Dichalcogenide and InGaZnO Channels

Cho

Lim

et al. 2019

Adv Elect Materials

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p-and n-channel FETs, homogeneous and heterogeneous complementary metal oxide semiconductor (CMOS) inverters have been reported. [15][16][17][18][19][20] Moreover, PN junction-and Schottky junction-based FETs were even reported using 2D TMD semiconductors. [21,22] However, in a practical view, devices based on only 2D materials are not easy to fabricate and seldom reproducible. Very recently, researchers have attempted other approaches combining 2D materials and conventionally proven ones to fabricate more practical type of classical devices such as CMOS inverters and hetero PN junction diodes. [23][24][25][26][27][28][29][30][31][32] Those could be regarded as practical approaches in consideration that one could use conventionally proven semiconductors for functional electron devices. However, such approaches are still very rare.In the present study, we approach to combine 2D n-/or p-TMD FET and conventional InGaZnO (IGZO) FET, presenting advanced non-classical functions: multivalue (MV) FETs for logic and photodetecting function, and signal frequency doubler. Multivalue logic would be important in the future for minimizing the power consumption which emerges as challenging issues in the present Si-based binary logic circuitry. [33][34][35] Frequency doubling is also an interesting and beneficial technique in alternating current (AC) circuit. [36,37] For these purposes, we have initially fabricated n-IGZO channel FET on glass substrate, which is followed by n-channel TMD (n-ReSe 2 , n-WSe 2 , p-, or ambipolar-MoTe 2 ) FETs. Although top-MoTe 2 /bottom-IGZO combination approach was once introduced for basic classical devices, [26] present study displays more advanced novel functions based on unique device architecture; we use a long and unique-shape gate pattern, so that n-or p-channel TMD and n-IGZO channels may be located side by side sharing a gate metal in common. Atomic layer deposited (ALD) Al 2 O 3 dielectric is located on the patterned gate. According to individual transfer characteristics of two FET devices, our n-IGZO FET always shows higher drain current (I D ) and more positive-side turn-on voltage (V t ) than those of n-TMD channel FETs. As a result, a combined transfer characteristics presented two-step drain current levels, so that their load-resistance inverter might demonstrate three value output Various functions are introduced from a unique field-effect device structure which combines or merges transition metal dichalcogenide (TMD) and InGaZnO (IGZO) channels together on one common gate: multivalue field effect transistors (FETs), photodetecting devices, and signal frequency doublers. Judging by the individual transfer characteristics of two FET devices, the n-IGZO FET always shows higher drain current and more positive-side turn-on voltage than those of n-TMD channel FETs. As a result, a combined transfer characteristic presents two-step drain current levels, so that their load-resistance inverter might demonstrate three value output voltage signals. Those ternary value inverter devices with n...

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Doping, Contact and Interface Engineering of Two‐Dimensional Layered Transition Metal Dichalcogenides Transistors

Cited by 228 publications

References 153 publications

Interstitial copper‐doped edge contact for n‐type carrier transport in black phosphorus

Interstitial copper‐doped edge contact for n‐type carrier transport in black phosphorus

Modulation doping of transition metal dichalcogenide/oxide heterostructures

Advanced Multifunctional Field Effect Devices Using Common Gate for Both 2D Transition‐Metal Dichalcogenide and InGaZnO Channels

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