Doping-controlled surface conduction in topological insulators with warping effects

Arabikhah, M.; Saffarzadeh, Alireza

doi:10.1016/j.jmmm.2021.168135

Cited by 2 publications

(2 citation statements)

References 30 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Recently, the microscopic origins of the out‐of‐plane SOT in L1 1 CuPt/FM bilayer have begun being studied by the theorists using first principles calculation. [ 29 ] Our first principles calculation on CuPt/Co [ 30 ] shows that the hexagonal out‐of‐plane spin texture at the Fermi surface is formed, which can lock the electron orbital momentum and spin polarization. An angle‐dependent OOP SOT and field‐free switching can be observed when the electric current is along different directions.…”

Section: Resultsmentioning

confidence: 99%

Enhancement of Out‐of‐Plane Spin–Orbit Torque by Interfacial Modification

et al. 2023

View full text Add to dashboard Cite

SOT deterministic switching of perpendicular magnetization requires an external in-plane magnetic field to break the mirror symmetry in the current-magnetization plane. This extra magnetic field is not favored for the scalability and integration of the devices. Various efforts have been made to break the mirror symmetry by extra design of the device structures, such as a wedge shape of ferromagnetic layer, [4] titled anisotropy, [5,6] additional magnetic layer with in-plane shape anisotropy, [7,8] exchange bias by adding antiferromagnetic layer, [9,10] and spin current gradient along the current direction. [11,12] The chiral symmetry breaking by a gradient of magnetic anisotropy or saturation magnetization can also induce field-free switching. [13,14] In order to increase the switching efficiency it is common to search for the spin source layer with a high spin Hall angle to increase the anti-dampinglike torque-induced longitudinal effective field. It still remains elusive for the increase of the effective out-of-plane (OOP) field in those structures since the breaking mirror symmetry is only a qualitative prerequisite. Recent works reported that the fieldfree switching can be realized by utilizing the intrinsic properties of the material such as the crystal symmetry in WTe 2 /FM Spin-orbit torque (SOT)-induced switching of perpendicular magnetization in the absence of magnetic field is crucial for the application of SOT-based spintronic devices. Recent works have demonstrated that the low-symmetry crystal structure in CuPt/CoPt can give rise to an out-of-plane (OOP) spin torque and lead to deterministic magnetization switching without an external field. However, it is essential to improve OOP effective field for the efficient switching. In this work, the impact of interface oxidation on the generation of OOP effective field in a CuPt/ferromagnet heterostructure is systematically studied. By introducing an oxidized CuPt surface, it is found that the field-free switching performance shows remarkable improvement. OOP effective field measurement indicates that the oxidation treatment can enhance the OOP effective field by more than two times. It is also demonstrated that this oxidation-induced OOP SOT efficiency enhancement is independent of the device shapes, magnetic materials, or magnetization easy axis. This work contributes to improve the performance of SOT devices and provides an effective fabrication guidance for future spintronic devices that utilize OOP SOT.

show abstract

Section: Resultsmentioning

confidence: 99%

Enhancement of Out‐of‐Plane Spin–Orbit Torque by Interfacial Modification

et al. 2023

View full text Add to dashboard Cite

show abstract

“…In modern condensed matter Physics TIs have achieved a great attention and importance due to their high surface conductance at room temperature and insulation in the bulk making them suitable for probing quantum computing [1][2][3][4][5]. They have band gap just like insulators but possess protected surface states.…”

Section: Introductionmentioning

confidence: 99%

Theoretical investigation of structural, topological, mechanical and thermal behavior of SrPtS and BaPtS Heusler alloys

Shakil¹,

Rehman²,

Khan³

et al. 2022

Phys. Scr.

View full text Add to dashboard Cite

Topological Insulators (TIs) have become new potential materials because of their super surface conduction and bulk insulation. Their technological importance motivated us to explore the topological nature of SrPtS and BaPtS Heusler alloys using full potential linearized augmented plane wave (FP-LAPW) method as implemented in Wien2k. Structural stability is checked using three different Wyckoff positions and further investigations were carried out to find the dynamic stability with phonon dispersion curves. The electronic band structure of both materials show metallic nature when generalized gradient approximation with Perdew-Burke-Ernzerhof (GGA+PBE) exchange and correlation functional is used but there appears a band gap when spin orbit coupling (SOC) was implemented. The band inversion strength has also been tested by applying the external pressure. Further, both alloys have been found mechanically stable and ductile in nature by determining the elastic parameters. Thermal and electrical conductances were also determined and discussed. The findings show that these materials being topological insulators are suitable for technological applications.

show abstract

Doping-controlled surface conduction in topological insulators with warping effects

Cited by 2 publications

References 30 publications

Enhancement of Out‐of‐Plane Spin–Orbit Torque by Interfacial Modification

Enhancement of Out‐of‐Plane Spin–Orbit Torque by Interfacial Modification

Theoretical investigation of structural, topological, mechanical and thermal behavior of SrPtS and BaPtS Heusler alloys

Contact Info

Product

Resources

About