The electron acceptors receive charge from the semiconductor until their acceptor levels are energetically in resonance with the Fermi energy. The resulting ground-state charge transfer across the interface gives rise to the formation of a space-charge region and associated band bending. This space-charge region can affect the charge-transport properties across the interface and significantly weakens the binding between substrate and adsorbate. [8] The spatial extent and the magnitude of the band bending depend on the amount of charge-transfer from the bulk to the adsorbate as well as on the bulk doping concentration and profile. Experimentally, those parameters are often challenging to control and not always well known. Moreover, they are subject to change during device operation, e.g., due to migration of charged defects, impeding the long-term stability of (opto)electronic devices.When the electron affinity of the adsorbate is larger than the substrate's work function, i.e., when the lowest unoccupied molecular orbital (LUMO) is below the Fermi-energy (E F ) as schematically shown in Figure 1a, the bulk crystal donates electrons to the adsorbate. The ensuing dipole moment (ΔΦ) shifts the now partially occupied LUMO upward in energy until it is in resonance with the Fermi-energy. [9,10] The overall interface dipole, ΔΦ, is often divided into a band bending contribution ΔΦ BB (i.e., the long-range, quasi-parabolic potential within the substrate), and a surface-dipole contribution ΔΦ SD (the approximately linear potential change in the "empty" space between substrate and adsorbate), as indicated in Figure 1b. The relative contribution of ΔΦ BB and ΔΦ SD depends strongly on the doping concentration of the substrate. [8] In principle, for low doping concentrations and strong electron acceptors, band bending could be as large as the total band gap of the substrate (≈3.5 eV in ZnO). In practice, however, ΔΦ BB is almost always limited by the presence of defect states at or near the surface, such as oxygen vacancies, [11][12][13] provided they are present in sufficient concentrations.Since the type and concentration of these defects is difficult to control, band bending is typically hard to engineer. In this article, we use these defect states as an analogy to demonstrate a new concept that uses properly designed, covalently attached self-assembled monolayers (SAMs) to act like surface defects that limit band bending at desired values. In order to do so, the highest occupied molecular orbitals (HOMOs) of these SAMs need to lie within the band gap of the inorganic substrate. This Adsorbing strong electron donors or acceptors on semiconducting surfaces induces band bending, whose extent and magnitude are strongly dependent on the doping concentration of the semiconductor. This study applies hybrid density-functional theory calculations together with the recently developed charge reservoir electrostatic sheet technique to account for charge transfer from the bulk of the semiconductor to the interface. This study further...