Doping-dependent metal-insulator transition in a disordered Hubbard model

High ambipolar mobility in cubic boron arsenide revealed by transient reflectivity microscopy

“…In contrast to the single exponential decay previously observed when excited by a 600-nm pump (Fig. 2C), the dynamics of photoexcited carriers excited by the 400-nm pump consist of three exponential decays: a fast exponential decay with a ~1-ps lifetime, a slow decay of ~20 ps, and an even slower decay on the order of 1 ns (21). These decays correspond to rapid relaxation of high-energy photoexcited carriers, further relaxation of carriers to the conduction and valence band edges, and a combination of lattice heating and recombination and trapping of electrons and holes at the band edges, respectively 21), in good agreement with the theoretical prediction (20).…”