Doping Effects and Relationship between Energy Band Gaps, Impact of Ionization Coefficient and Light Absorption Coefficient in Semiconductors

Abstract

The doping process is very important in semiconductor technology that is widely used in the production of electronic devices. The effects of doping on the resistivity, mobility and energy band gap of semiconductors are significant and can greatly impact the performance of electronic devices. This thesis aims to investigate the impact of doping on the resistivity, mobility, energy band gap, impact of ionization coefficient, and light absorption coefficient of semiconductors. The study involves an in-depth analysis of the electronic properties of doped semiconductors and their behavior in various conditions. This thesis will provide a comprehensive understanding of the impact of doping on the electronic properties of semiconductors. The energy band gap, impact of ionization coefficient, and Light absorption coefficient were observed in this thesis. In the experimental result, the relation between energy band gap and atomic density, light absorption coefficient and atomic density, impact ionization and atomic density, impact ionization coefficient and Light absorption coefficient, resistivity and mobility has been found.

Electrochemical performance enhancement of MnO2 nanowires through silver incorporation for next-generation supercapacitors

“…Bappi et al have reported that doping induces scattering centers. 71 Heavy doping induced more scattering centers (increased charge carrier density) which increased the energy barrier at the electrode–electrolyte interface giving rise to an increase in R ct and reduced mobility of charge carriers which is also confirmed by EIS and I – V measurements respectively.…”

“…88,89 Additionally, high doping leads to more scattering centers which also resists the charge transfer at the electrode–electrolyte interface. 90…”