2022
DOI: 10.1016/j.mtcomm.2022.103669
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Doping effects of Ru on Sb2Te and Sb2Te3 as phase change materials studied by first-principles calculations

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Cited by 6 publications
(8 citation statements)
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“…On this basis, the formation energy of C doping in an FCC-Sb 2 Te 3 was calculated and compared. The Equation for calculating the formation energy of C doping is as follows [ 15 , 20 , 21 , 25 ]: where and are the total energies of a supercell with and without C doping, respectively, and represents the number of doped atoms. means adding atoms to the supercell, means removing atoms from the supercell, and means the chemical potential of i substance.…”
Section: Resultsmentioning
confidence: 99%
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“…On this basis, the formation energy of C doping in an FCC-Sb 2 Te 3 was calculated and compared. The Equation for calculating the formation energy of C doping is as follows [ 15 , 20 , 21 , 25 ]: where and are the total energies of a supercell with and without C doping, respectively, and represents the number of doped atoms. means adding atoms to the supercell, means removing atoms from the supercell, and means the chemical potential of i substance.…”
Section: Resultsmentioning
confidence: 99%
“…We use the Vienna ab initio simulation package (VASP) for density functional theory calculation. We adopted the projector augmented wave (PAW) potentials for describing the ion–electron interaction, the generalized gradient approximation (GGA) of Perdew-Burke–Ernzerhof (PBE) for exchange–correlation interactions between electrons [ 15 , 19 , 20 , 21 , 22 , 23 ]. The calculated valence electrons include 2s 2 2p 2 of C, 5s 2 5p 3 of Sb, and 5s 2 5p 4 of Te, and the plane wave cutoff energy is set to 550 eV.…”
Section: Calculations and Experimental Sectionmentioning
confidence: 99%
“…As Ru is substituted for Fe on the A‐site, our analysis shows that the O 2p band center from the RuO 6 octahedra framework has larger overlap with the Ru 4d band center upshifted farther away from the Fermi level energy and generally narrows the energy gap between the Ru 4d and O 2p band centers. [ 42 ] The states below the fermi level energy while transitioning from FNO to FRNO or RNO have a larger oxygen strength; thus, indicating a higher covalency of the RuO bond in FRNO or RNO, as the fermi level energy moves down in energy and closer to the O 2p states. The operando Ru‐K‐edge EXAF at a higher applied potential of 1.49 V (vs RHE) and O 2p band center calculated of FRNO/CC indicates the upshift of the O 2p band center promoting the development of Ru vacancy sites (Figure 5o).…”
Section: Resultsmentioning
confidence: 99%
“…Among the nonvolatile memories, phase change memory (PCM) has been regarded as a potential next-generation non-volatile memory because of its edge of high scalability, faster operation speed and good durability [5][6][7][8][9][10]. The principle relies on the transition between the amorphous and crystalline state and is embodied in the application of a long low current pulse (SET) to put the PCM device in a low resistance crystalline state, followed by a short high current pulse (RESET) to put the device in a high resistance amorphous state [11][12][13][14].…”
Section: Introductionmentioning
confidence: 99%