Doping engineering to enhance the performance of double-gate pMOSFETs with ultrashort gate length (5 nm)

Khaliq, Afshan; Zhang, Shuo

doi:10.1007/s10825-021-01693-9

Cited by 2 publications

(2 citation statements)

References 21 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Khaliq et al used doping engineering to improve the electrical characteristics in double-gate pMOSFETs hosting a 5 nm gate length [353]. A NEGF approach was used in combination with a six-band k • p Hamiltonian.…”

Section: Other Types Of Fets and Diodesmentioning

confidence: 99%

Computational perspective on recent advances in quantum electronics: from electron quantum optics to nanoelectronic devices and systems

Weinbub

Kosik

2022

J. Phys.: Condens. Matter

View full text Add to dashboard Cite

Quantum electronics has significantly evolved over the last decades. Where initially the clear focus was on light-matter interactions, nowadays approaches based on the electron's wave nature have solidified themselves as additional focus areas. This development is largely driven by continuous advances in electron quantum optics, electron based quantum information processing, electronic materials, and nanoelectronic devices and systems. The pace of research in all of these areas is astonishing and is accompanied by substantial theoretical and experimental advancements. What is particularly exciting is the fact that the computational methods, together with broadly available large-scale computing resources, have matured to such a degree so as to be essential enabling technologies themselves. These methods allow to predict, analyze, and design not only individual physical processes but also entire devices and systems, which would otherwise be very challenging or sometimes even out of reach with conventional experimental capabilities. This review is thus a testament to the increasingly towering importance of computational methods for advancing the expanding field of quantum electronics. To that end, computational aspects of a representative selection of recent research in quantum electronics are highlighted where a major focus is on the electron's wave nature. By categorizing the research into concrete technological applications, researchers and engineers will be able to use this review as a source for inspiration regarding problem-specific computational methods.

show abstract

Section: Other Types Of Fets and Diodesmentioning

confidence: 99%

Computational perspective on recent advances in quantum electronics: from electron quantum optics to nanoelectronic devices and systems

Weinbub

Kosik

2022

J. Phys.: Condens. Matter

View full text Add to dashboard Cite

show abstract

“…Furthermore, in organic light-emitting diodes (OLEDs), the intrinsic emission zone's thickness and quality between p-doped and n-doped regions are vital for device performance, with an optimal emitter layer thickness of 20 nm being identified [19]. Overall, achieving optimal OPD performance requires a delicate balance of layer thickness, precise doping densities, and high-quality interfaces to minimize recombination and maximize efficiency [20], [21], [22].…”

Section: Introductionmentioning

confidence: 99%

Enhancing Organic Photodetector Performance Based on PBDB-T/ITIC and GO: A SCAPS-1D Simulation Study

Alali,

Oduncuoglu

2024

Preprint

View full text Add to dashboard Cite

This study investigates the optimization of organic photodetectors (OPDs) using SCAPS-1D simulation, focusing on the effects of layer thickness, doping density, temperature, external quantum efficiency (EQE), and responsivity on key performance metrics. The device structure includes PBDB-T/ITIC as the active layer and graphene oxide (GO) as the hole transport layer (HTL). By systematically varying the thickness of the PBDB-T/ITIC active layer and the GO hole transport layer, as well as adjusting the donor and acceptor densities, we analyze their impact on open-circuit voltage (Voc), short-circuit current density (Jsc), fill factor (FF), power conversion efficiency (η), EQE, and responsivity. The simulation results reveal that an optimal active layer thickness of 800 nm for PBDB-T/ITIC and a GO layer thickness of 50 nm maximize device performance. Additionally, a donor density of \({9\times 10}^{19}{cm}^{-3}\) for PFN and an acceptor density of \({10}^{20}{cm}^{-3}\) for GO significantly enhance efficiency. The photodetector demonstrates a high current under illumination, peaking responsivity around 920 nm, and excellent performance in the visible spectrum. Temperature variations show optimal performance around 330 K. These findings highlight the critical role of precise material and structural optimization in achieving high-efficiency OPDs, providing valuable insights for future research and development in this field.

show abstract

Doping engineering to enhance the performance of double-gate pMOSFETs with ultrashort gate length (5 nm)

Cited by 2 publications

References 21 publications

Computational perspective on recent advances in quantum electronics: from electron quantum optics to nanoelectronic devices and systems

Computational perspective on recent advances in quantum electronics: from electron quantum optics to nanoelectronic devices and systems

Enhancing Organic Photodetector Performance Based on PBDB-T/ITIC and GO: A SCAPS-1D Simulation Study

Contact Info

Product

Resources

About