Doping-Free Complementary Logic Gates Enabled by Two-Dimensional Polarity-Controllable Transistors

Resta, Giovanni V.; Balaji, Yashwanth; Lin, Dennis; Radu, Iuliana; Catthoor, Francky; Gaillardon, Pierre-Emmanuel; Micheli, Giovanni De

doi:10.1021/acsnano.8b02739

Cited by 120 publications

(91 citation statements)

References 57 publications

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“…In regard to tungsten dichalcogenides, WSe 2 is the most proverbially studied material for building CMOS inverters by reasons of its inherent ambipolar characteristic, wide energy gap of 1–2 eV and ultrathin thickness of <1 nm . Besides, FETs based on WSe 2 display large charge carrier mobilities of more than 100 cm 2 V −1 s −1 , on/off ratio of exceeding 10 6 and relatively small subthreshold swing of 60 mV decade −1 due to the ultrathin semiconducting channel and hence better electrostatic modulation, which provides lots of advantages to fabricate low‐power logic inverters with extremely low off‐state voltage and large gain value . Recently, Pu et al demonstrated high‐performance CMOS inverters on the basis of CVD‐grown WSe 2 monolayers and ion gel dielectric (Figure d) .…”

Section: Functional Applications Of Ambipolar Transistorsmentioning

confidence: 99%

Recent Advances in Ambipolar Transistors for Functional Applications

Ren

Yang

Zhou

et al. 2019

Adv Funct Materials

182

139

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Ambipolar transistors represent a class of transistors where positive (holes) and negative (electrons) charge carriers both can transport concurrently within the semiconducting channel. The basic switching states of ambipolar transistors are comprised of common off-state and separated on-state mainly impelled by holes or electrons. During the past years, diverse materials are synthesized and utilized for implementing ambipolar charge transport and their further emerging applications comprising ambipolar memory, synaptic, logic, and light-emitting transistors on account of their special bidirectional carrier-transporting characteristic. Within this review, recent developments of ambipolar transistor field involving fundamental principles, interface modifications, selected semiconducting material systems, device structures, ambipolar characteristics, and promising applications are highlighted. The existed challenges and prospective for researching ambipolar transistors in electronics and optoelectronics are also discussed. It is expected that the review and outlook are well timed and instrumental for the rapid progress of academic sector of ambipolar transistors in lighting, display, memory, as well as neuromorphic computing for artificial intelligence.

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Section: Functional Applications Of Ambipolar Transistorsmentioning

confidence: 99%

Recent Advances in Ambipolar Transistors for Functional Applications

Ren

Yang

Zhou

et al. 2019

Adv Funct Materials

182

139

View full text Add to dashboard Cite

show abstract

“…Open base BJT is a commonly available photodetector. The advantages of making heterostructures and electrostatic doping in TMDCs allow for novel BJT architectures for improved photodetection responsivity [99][100][101][102][103][104][105][106]. Figure 5(b) (i, ii) illustrate the schematic of the 2D heterostructure BJT consisting of three materials (WSe 2 /black phosphorus/MoS 2 ) and its band diagram under illumination showing the amplification mechanism, respectively.…”

Section: Photodetectorsmentioning

confidence: 99%

Optoelectronic and photonic devices based on transition metal dichalcogenides

Thakar

Lodha

2020

Mater. Res. Express

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Transition metal dichalcogenides (TMDCs) are a family of two-dimensional layered materials (2DLMs) with extraordinary optical properties. They present an attractive option for future multifunctional and high-performance optoelectronics. However, much remains to be done to realize a mature technology for commercial applications. In this review article, we describe the progress and scope of TMDC devices in optical and photonic applications. Various photoresponse mechanisms observed in such devices and a brief discussion on measurement and analysis methods are described. Three main types of optoelectronic devices, namely photodetectors, photovoltaics and lightemitting devices are discussed in detail with a focus on device architecture and operation. Examples showing experimental integration of 2DLM-based devices with silicon photonics are also discussed briefly. A wide range of data for key performance metrics is analysed with insights into future directions for device design, processing and characterization that can help overcome present gaps and challenges. While the field is still in its infancy and requires significant efforts toward standardizing various approaches towards a mature technology, it has already shown promising results in broader aspects of compatibility, integration and performance for future electronics. Sensors are increasingly becoming an integrated part of the global electronic eco-system with the rise of data-driven technologies. There is a growing need for networks of cost-effective, robust and reliable sensors and their integration with present technologies. Optoelectronic and photonic devices are of importance for both sensing as well as high-speed optical communication applications. 2DLMs demonstrate significant light-matter interaction that is tunable with external physical and electronic parameters such as pressure, strain, electric and magnetic field [1-6]. Moreover, 2DLMs show strong dependence of their band structure on thickness with a transition to direct bandgap in monolayers in most of the known 2DLMs [7][8][9]. Graphene has been the most studied material since its discovery in 2004 [10][11][12]. Apart from graphene, there are nearly 1500 possible 2DLMs with a wide range of material properties as predicted by first principle simulations [13]. Transition metal dichalcogenides (TMDCs) are a family of 2DLMs in the form of MX 2 compounds, where M is a transition metal (Mo, W, Re) and X is a chalcogen (S, Se, Te). TMDCs are promising for electronic applications due to their semiconducting behaviour as opposed to semi-metallic graphene, and better thermal stability than materials such as black phosphorus and silicene [14][15][16][17][18][19]. Optoelectronic devices based on TMDCsTMDCs have been the most studied 2DLMs, apart from graphene and black phosphorus, for electronic and optoelectronic device applications [20,21]. They have a sizeable bandgap in the visible and near infrared (NIR) range (∼1-2 eV) that is optimal for optoelectronic sensors and light-emitting sources for short-ran...

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“…Considerable efforts have been devoted to realize 2D CMOS functions in the past few years [10][11][12][13] . Early attempts focused on using two different 2D semiconductors, where one material is used for the NMOS (e.g., MoS 2 and MoSe 2 ) and a different material is used for PMOS (e.g., black phosphorus, WSe 2 ) [14][15][16] .…”

mentioning

confidence: 99%

Doping-free complementary WSe2 circuit via van der Waals metal integration

et al. 2020

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Two-dimensional (2D) semiconductors have attracted considerable attention for the development of ultra-thin body transistors. However, the polarity control of 2D transistors and the achievement of complementary logic functions remain critical challenges. Here, we report a doping-free strategy to modulate the polarity of WSe 2 transistors using same contact metal but different integration methods. By applying low-energy van der Waals integration of Au electrodes, we observed robust and optimized p-type transistor behavior, which is in great contrast to the transistors fabricated on the same WSe 2 flake using conventional deposited Au contacts with pronounced n-type characteristics. With the ability to switch majority carrier type and to achieve optimized contact for both electrons and holes, a doping-free logic inverter is demonstrated with higher voltage gain of 340, at the bias voltage of 5.5 V. Furthermore, the simple polarity control strategy is extended for realizing more complex logic functions such as NAND and NOR.

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Doping-Free Complementary Logic Gates Enabled by Two-Dimensional Polarity-Controllable Transistors

Cited by 120 publications

References 57 publications

Recent Advances in Ambipolar Transistors for Functional Applications

Recent Advances in Ambipolar Transistors for Functional Applications

Optoelectronic and photonic devices based on transition metal dichalcogenides

Doping-free complementary WSe2 circuit via van der Waals metal integration

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