Doping GaN NPs Synthesized by a Chemical Method for p-n Junction Application

Abstract

This research was devoted to studying the doping of GaN NPs at low temperature with Mg and the possibility of using them in the p-n junction. This study was subjected to a FESEM, EDX, XRD, PL and Hall Effect examination. The FESEM examination showed clear images of the NPs, the XRD peaks appear at 2? = 32.5, 39.1 and 45.48 which conform the crystalline of p-GaN NPs, Hole Effects measurements confirm the p-GaN with different Mg ratios. The ideality factor and series resistance of p-n junction have been measured.