Doping-induced grain refinement contributes to enhanced thermoelectric performance of n-type PbSe at room temperature

Zhao, Canyang; Deng, Qian; Yuan, Wei; An, Xiang; Su, Wenjun; He, Zhengmin; Xie, Yin; Zhao, Zhilong; Ang, Ran

doi:10.1039/d3ta08083h

J. Mater. Chem. A

2024

DOI: 10.1039/d3ta08083h

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Doping-induced grain refinement contributes to enhanced thermoelectric performance of n-type PbSe at room temperature

Canyang Zhao,

Qian Deng,

Wei Yuan

et al.

Abstract: Grain refinement is a successful strategy to depress lattice thermal conductivity and improve the performance of thermoelectric materials, while it often requires complex processing techniques. Here, we report a striking...

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Cited by 6 publications

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Interstitials in Thermoelectrics

Xu,

Yin,

Xiao

et al. 2024

Advanced Materials

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Defect structure is pivotal in advancing thermoelectric performance with interstitials being widely recognized for their remarkable roles in optimizing both phonon and electron transport properties. Diverse interstitial atoms have been identified in previous works according to their distinct roles and can be classified into rattling interstitial, decoupling interstitial, interlayer interstitial, dynamic interstitial and liquid interstitial. Specifically, rattling interstitial can cause phonon resonance in cage compound to scatter phonon transport; decoupling interstitial can contribute to phonon blocking and electron transport due to their significantly different mean free paths; interlayer interstitial can facilitate out‐of‐layer electron transport in layered compounds; dynamic interstitial can tune temperature‐dependent carrier density and optimize electrical transport properties at wide temperatures; liquid interstitial could improve the carrier mobility at homogeneous dispersion state. All of these interstitials have positive impact on thermoelectric performance by adjusting transport parameters. This perspective therefore intends to provide a thorough overview of advances in interstitial strategy and highlight their significance for optimizing thermoelectric parameters. Finally, the profound potential for extending interstitial strategy to various other thermoelectric systems is discussed and some future directions in thermoelectric material are also outlined.This article is protected by copyright. All rights reserved

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Interstitials in Thermoelectrics

Xu,

Yin,

Xiao

et al. 2024

Advanced Materials

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Enhanced Thermoelectric Performance of N‐Type PbSe Through Semi‐Coherent Nanostructure by AgCuTe Alloying

Wang,

Wang

et al. 2024

Small

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N‐type PbSe thermoelectric materials encounter challenges in improving the power factor due to the single‐band structure near the Fermi level, which obstructs typical band convergence. The primary strategy for enhancing the thermoelectric figure of merit (ZT) for n‐type PbSe involves reducing lattice thermal conductivity (κlat) by introducing various defect structures. However, lattice mismatches resulting from internal defects within the matrix can diminish carrier mobility, thereby affecting electrical transport properties. In this study, n‐type AgCuTe‐alloyed PbSe systems achieve a peak ZT value of ≈1.5 at 773 K. Transmission electron microscopy reveals nanoprecipitates of Ag2Te, the room temperature second phase of AgCuTe, within the PbSe matrix. Meanwhile, a unique semi‐coherent phase boundary is observed between the PbSe matrix and the Ag2Te nanoprecipitates. This semi‐coherent phase interface effectively scatters low‐frequency phonons while minimizing damage to carrier mobility. Additionally, the dynamic doping effect of Cu atoms from the decomposition of AgCuTe within the matrix further optimize the high‐temperature thermoelectric performance. Overall, these factors significantly enhance the ZT across the whole temperature range. The ZT value of ≈1.5 indicates high competitiveness compared to the latest reported n‐type PbSe materials, suggesting that these findings hold promise for advancing the development of efficient thermoelectric systems.

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Pseudo‐Nanostructuring and Grain Refinement Enhance the Near‐Room‐Temperature Thermoelectric Performance in n‐type PbSe

Xie,

Deng,

Yang

et al. 2024

Small

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PbSe, a promising Te‐free thermoelectric material for medium‐temperature applications, has garnered considerable attention due to its substantial thermoelectric potential and relatively low cost. However, the vast majority of research on polycrystalline PbSe thermoelectrics has focused primarily on improving its medium‐temperature performance, often neglecting the enhancement of near‐room‐temperature performance and effective module design. Here, an n‐type polycrystalline PbSe material (Cu0.01Pb0.85Ge0.15Se) is presented that exhibits a room‐temperature zT of ≈0.6 and an average zT of 0.86 from 303 to 523 K. This superior performance is realized through the incorporation of a high‐concentration Ge into n‐type Cu0.01PbSe, which induces a novel pseudo‐nanostructure and grain refinement, promoting electron‐phonon decoupling. Based on this, seven‐pair module devices are fabricated, achieving a record‐high conversion efficiency of up to 5.1% at a temperature difference of only 228 K, and an unprecedented maximum cooling temperature difference of 47.2 K when the hot‐side temperature is 350 K. The findings provide a strong foundation for advancing Te‐free polycrystalline PbSe‐based materials for thermoelectric cooling and low‐temperature power generation.

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Doping-induced grain refinement contributes to enhanced thermoelectric performance of n-type PbSe at room temperature

Abstract: Grain refinement is a successful strategy to depress lattice thermal conductivity and improve the performance of thermoelectric materials, while it often requires complex processing techniques. Here, we report a striking...

Cited by 6 publications

References 65 publications

Interstitials in Thermoelectrics

Interstitials in Thermoelectrics

Enhanced Thermoelectric Performance of N‐Type PbSe Through Semi‐Coherent Nanostructure by AgCuTe Alloying

Pseudo‐Nanostructuring and Grain Refinement Enhance the Near‐Room‐Temperature Thermoelectric Performance in n‐type PbSe

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