Doping of copper indium selenide (CuInSe2) crystals: evidence for influence of thermal defects

Abecassis, Daniel; Soltz, David

doi:10.1021/cm00002a008

Cited by 12 publications

(3 citation statements)

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(1 reference statement)

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“…It is thus possible that the increase in b, found in this experiment (which is reproducible), was caused by changes in the concentration of other defect(s), due to the heat treatment (cf. ref 35).…”

Section: Resultsmentioning

confidence: 99%

Ion migration in chalcopyrite semiconductors

Dagan¹,

Ciszek²,

Cahen³

1992

J. Phys. Chem.

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Quantitative data are presented that show partial ionic conductivity of Cu or Ag in ternary and quaternary electronic semiconductors, with idealized stoichiometry Cu,Ag,,InSe2. A trend of increasing facility of ionic motion with increasing Ag content was observed. Ionic transference numbers up to 0.13 and 0.55 were measured for CUI-and AgInSq,, respectively. This trend can be correlated with the degree of compactness of the structure. It is supported by results from measurements of effective values of chemical diffusion coefficients, obtained by a potentiostatic current decay technique. Those results show a generally higher diffusivity in AgInSe, than in CuInSe2 A clear trend of increasing diffusion coefficient (up to lO-' cm2/s) with decreasing concentration of IB metal was observed. No obvious general correlation is seen between net electronic carrier concentration (or resistivity) and diffusion coefficients, except that overall the highest diffusion coefficients are found for Cu-poor (or Ag-poor) samples which are also the most resistive. The effect of temperature (between 20 and 100 "C) on the diffusivity is small. On the basis of our observations we conclude that diffusion occurs predominantly via a vacancy mechanism and suggest that this possibility of coexistence of significant ionic mobility with true semiconductivity can be useful for electronic doping by native defects.

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Section: Resultsmentioning

confidence: 99%

Ion migration in chalcopyrite semiconductors

Dagan¹,

Ciszek²,

Cahen³

1992

J. Phys. Chem.

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“…In this regard, metal-halide perovskites have been compared to chalcopyrites, 9 which also possess electrically active defects resulting in high compensation ratios. 10…”

Section: Introductionmentioning

confidence: 99%

Long-Range Charge Extraction in Back-Contact Perovskite Architectures via Suppressed Recombination

Tainter

Hörantner

Pazos-Outón

et al. 2019

Joule

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A detailed understanding of charge transport is vital to maximize the efficiencies of optoelectronic devices. Using a back-contact architecture, the authors probe transport of electrons and holes separately in polycrystalline hybrid perovskite thin films. Isolating photoexcited charge carriers in separate regions of the device leads to long diffusion ranges of carriers. The authors demonstrate a back-contact perovskite solar cell that operates on majority-carrier diffusion. These results highlight electrode interfaces as limiting aspects of current back-contact architectures, indicating opportunities for improvement.

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“…For example, doping Si is rather straightforward with high activation percentages of 0.5 or more, due to preferred substitutions of dopants on lattice sites rather than other locations such as inclusions or defects . Similar controlled substitutions in ternary and higher-order tetrahedrally based semiconductors, such as CuInSe 2 , become more difficult as substitutions can occur in multiple sites and many different defects can form. − Higher-order compounds with different structural motifs, such as misfit layer compounds that contain interleaved layers of a rock salt structured constituent with a transition-metal dichalcogenide, provide an even greater challenge. Processing conditions can also make substitutions difficult.…”

Section: Introductionmentioning

confidence: 99%

Kinetically Controlled Site-Specific Substitutions in Higher-Order Heterostructures

et al. 2015

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Targeted substitutions in extended solids have been historically challenging, limited by high temperature and the synthetic routes traditionally used. Here, we report the synthesis of new compounds in the (Pb x Sn 1−x Se) 1+δ TiSe 2 intergrowth family from designed amorphous precursors. By controlling local composition and using low reaction temperatures, the metastable quaternary compounds can be synthesized over the entire range of 0 ≤ x ≤ 1 as crystallographically aligned thin films. X-ray diffraction and electron microscopy confirm the formation of a solid solution in the Pb x Sn 1−x Se layer, with the overall and constituent structure both changing as a function of composition as predicted by Vegard's law. Charge transfer between constituents and subsequent conduction in the TiSe 2 describes the observed transport properties. The mobility of the charge carriers is increased in compounds with the alloyed Pb x Sn 1−x Se layer, providing direct evidence that charge transport occurs predominantly in the dichalcogenide layer.

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Doping of copper indium selenide (CuInSe2) crystals: evidence for influence of thermal defects

Cited by 12 publications

References 1 publication

Ion migration in chalcopyrite semiconductors

Ion migration in chalcopyrite semiconductors

Long-Range Charge Extraction in Back-Contact Perovskite Architectures via Suppressed Recombination

Kinetically Controlled Site-Specific Substitutions in Higher-Order Heterostructures

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