Doping of GaAs by laser ablated ZnTe

Abstract

The exposure of GaAs to laser ablated ZnTe causes the formation of donor (Te)-acceptor (Zn) pair states. The photonically transferred dopants resulted in a distinct transition at 1.378 eV (FWHM ≤ 30 meV), visualized by room temperature photocurrent spectroscopy. The presence of impurity absorption in the GaAs was confirmed by transmission measurements. Notably, from the standpoint of technological applications, flipping the applied bias (±1.0 V) to the ZnTe/GaAs heterostructure switches the spectral photocurrent response between the fundamental GaAs absorption and the donor-acceptor transition peak. The results further reveal the influence of the ablating laser line on the optoelectronic device properties.