Doping of GaN1−xAsx with high As content

Levander, A. X.; Новиков, С. В.; Liliental‐Weber, Z.; Reis, Roberto dos; Wu, Junqiao; Foxon, C.T.; Yu, K. M.; Walukiewicz, W.

doi:10.1063/1.3657779

Cited by 5 publications

(9 citation statements)

References 24 publications

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“…Furthermore, both p-type and n-type doping of a partially amorphous GaN1-xAsx (x~0.55-0.65) have been demonstrated [80,81]. We observed that the room temperature p-type conductivity of GaN1-xAsx increased monotonically with increasing of Mg content, up to a maximum value of about 55 S/cm for 8 atomic % Mg content [80]. We have found that achieving of the p-type doping of GaN1-xAsx, requires growth under Ga-rich conditions.…”

Section: Lt-mbe Grown Gan1-xasx Over the Entire Composition Rangementioning

confidence: 99%

Highly mismatched GaN_1−xSb_xalloys: synthesis, structure and electronic properties

Sarney

Новиков

et al. 2016

Semicond. Sci. Technol.

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Highly mismatched alloys (HMAs) is a class of semiconductor alloys whose constituents are distinctly different in terms of size, ionicity and/or electronegativity. Electronic properties of the alloys deviate significantly from an interpolation scheme based on small deviations from the virtual crystal approximation. Most of the HMAs were only studied in a dilute composition limit. Recent advances in understanding of the semiconductor synthesis processes allowed growth of thin films of HMAs under non-equilibrium conditions. Thus reducing the growth temperature allowed synthesis of group III-N-V HMAs over almost the entire composition range. This paper focuses on the GaNxSb1-x HMA which has been suggested as a potential material for solar water dissociation devices. Here we review our recent work on the synthesis, structural and optical characterization of GaN1-xSbx HMA. Theoretical modeling studies on its electronic structure based on the band anticrossing (BAC) model are also reviewed. In particular we discuss the effects of growth temperature, Ga flux and Sb flux on the incorporation of Sb, film microstructure and optical properties of the alloys. Results obtained from two separate MBE growths are directly compared. Our work demonstrates that a large range of direct bandgap energies from 3.4 eV to below 1.0 eV can be achieved for this alloy grown at low temperature. We show that the electronic band structure of GaN1-xSbx HMA over the entire composition range is well described by a modified the BAC model which includes the dependence of the host matrix band edges as well as the BAC model coupling parameters on composition. We emphasize that the modified BAC model of the electronic band structure developed for the full composition of GaNxSb1-x is general and is applicable to any HMA.

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Section: Lt-mbe Grown Gan1-xasx Over the Entire Composition Rangementioning

confidence: 99%

Highly mismatched GaN_1−xSb_xalloys: synthesis, structure and electronic properties

Sarney

Новиков

et al. 2016

Semicond. Sci. Technol.

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“…These semiconductors were grown using highly non-equilibrium low-temperature molecular beam epitaxy (LT-MBE) at temperatures between 200-300 o C. Recently we have already reported that p doping of GaN 1-x As x using Mg is possible [10]. In this paper we focus on the relation between the microstructure and conductivity of these samples.…”

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confidence: 99%

“…The active N flux with the total N beam equivalent pressure (BEP) ~5.5x10 -6 Torr and 2.2x10 -7 were used in all growth. The details of this growth were reported earlier [1,2,10]. For p-doping Mg concentration was controlled by Mg BEP of 6.6x10 -9 Torr.…”

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confidence: 99%

Microstructure of Mg doped GaNAs alloys

Liliental‐Weber

Reis

Новиков

et al. 2012

Phys. Status Solidi C

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Transmission Electron Microscopy of Mg doped GaN1‐xAsx samples, grown by MBE at low temperatures, show substantial structural changes for samples that are semi‐insulating and those with high or low conductivity. The conductive samples show p‐type conductivity as evidence from the positive thermopower values. All the Mg doped samples show phase segregation: cubic GaAs and GaN grains (a mixture of cubic and some hexagonal) phases within an amorphous matrix. The best conductive samples show cubic GaAs grains with high density of stacking faults embedded into an amorphous matrix. The samples that are less conductive have lower ratio of the amorphous to the crystalline phase of the samples and much lower density of stacking faults. Higher Mg concentration is expected in the amorphous parts of the samples The semi‐insulating samples that have either low Mg concentration or low As show grains of GaAs and GaN attached to each other with no evidence of the amorphous phase between them. There are no SFs in these grains. It is possible that the presence of the GaN between the GaAs grains lead to semi‐insulating material properties since p‐type doping of GaN is more difficult. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…A hole concentration of 8.5×10 19 cm -3 is achieved which allows a specific contact resistance of 1.3×10 -4 Ω-cm 2 . An increased gallium beam equivalent pressure during growth allows reduced resistivity but can result in the formation of a polycrystalline structure.…”

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confidence: 99%

“…1 A hole concentration up to 1×10 20 cm -3 was achieved and the electrical properties of the free carriers were studied. 2 The high hole concentration can be used to improve the performance of electronic devices such as PN diodes, pGaN gated HFETs and JFETs. However, reports on the characteristics of the material in electronic devices is still lacking.…”

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confidence: 99%

Characterization of p-GaN_1−xAs_x/n-GaN PN junction diodes

Qian¹,

Lee²,

Vajargah³

et al. 2016

Semicond. Sci. Technol.

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The structural properties and electrical conduction mechanisms of p-type amorphous GaN 1-x As x /n-type crystalline GaN PN junction diodes are presented. A hole concentration of 8.5×1019 cm -3 is achieved which allows a specific contact resistance of 1.3×10 -4 Ω-cm 2 . An increased gallium beam equivalent pressure during growth allows reduced resistivity but can result in the formation of a polycrystalline structure. Temperature dependent current voltage characteristics at low forward bias (<0.35 V)show that conduction is recombination dominated in the amorphous structure whereas a transition from tunneling to recombination is observed in the polycrystalline structure. At higher bias, the currents are space charge limited due to the low carrier density in the n-type region. In reverse bias, tunneling current dominates at low bias (<0.3 V) and becomes recombination dominated at higher reverse bias.GaN-based PN diodes are attractive for power electronic applications due to the high breakdown field and low power loss and are likely to play an important part in supporting the required large voltages in vertical power devices. However, achieving a high hole concentration (>10 18 cm -3 ) remains difficult due to the high activation energy of Mg dopants which can result in high resistivity and poor ohmic contacts. Mg-doped p-type amorphous GaN 1-x As x (0.17

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Doping of GaN1−xAsx with high As content

Cited by 5 publications

References 24 publications

Highly mismatched GaN_1−xSb_xalloys: synthesis, structure and electronic properties

Highly mismatched GaN_1−xSb_xalloys: synthesis, structure and electronic properties

Microstructure of Mg doped GaNAs alloys

Characterization of p-GaN_1−xAs_x/n-GaN PN junction diodes

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Doping of GaN1−xAsx with high As content

Cited by 5 publications

References 24 publications

Highly mismatched GaN1−xSbxalloys: synthesis, structure and electronic properties

Highly mismatched GaN1−xSbxalloys: synthesis, structure and electronic properties

Microstructure of Mg doped GaNAs alloys

Characterization of p-GaN1−xAsx/n-GaN PN junction diodes

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Product

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Highly mismatched GaN_1−xSb_xalloys: synthesis, structure and electronic properties

Highly mismatched GaN_1−xSb_xalloys: synthesis, structure and electronic properties

Characterization of p-GaN_1−xAs_x/n-GaN PN junction diodes